參數(shù)資料
型號(hào)： MJL21195
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： STARTER KIT, EASY 500; Output type:Relay; Temp, op. max:55(degree C); Temp, op. min:-25(degree C) RoHS Compliant: Yes
中文描述： 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-264AA
封裝： CASE 340G-02, TO-3BPL, TO-264, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 135K
代理商： MJL21195
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
—
—
100
μ
Adc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
—
—
100
μ
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
IS/b
4.0
2.25
—
—
—
—
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
25
8
—
—
100
—
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
—
—
2.2
Vdc
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
—
—
—
—
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
hFE
unmatched
hFE
matched
(Matched pair hFE = 50 @ 5 A/5 V)
THD
—
—
0.8
0.08
—
—
%
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
—
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2%
Cob
—
—
500
pF
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
,
T
F
PNP MJL21195
NPN MJL21196
IC, COLLECTOR CURRENT (AMPS)
6.5
6.0
5.5
5.0
4.5
4.0
2.5
2.0
1.0
10
0.1
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
0.1
1.0
VCE = 10 V
TJ = 25
°
C
ftest = 1 MHz
VCE = 10 V
TJ = 25
°
C
ftest = 1 MHz
3.5
3.0
,
T
F
VCE = 5 V
VCE = 5 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJL21195_05 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
MJL21195_10 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Silicon Power Transistors
MJL21195G 功能描述:兩極晶體管 - BJT BIP PNP 16A 250V FG RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJL21196 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJL21196G 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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