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參數(shù)資料
| 型號： | MJL4302A |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary NPN-PNP Silicon Power Bipolar Transistors |
| 中文描述： | 15 A, 350 V, PNP, Si, POWER TRANSISTOR, TO-264AA |
| 封裝： | CASE 340G-02, TO-3PBL, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 55K |
| 代理商： | MJL4302A |
Semiconductor Components Industries, LLC, 2003
July, 2003 Rev. 1
1
Publication Order Number:
MJL4281A/D
MJL4281A (NPN)
MJL4302A (PNP)
Preferred Device
Complementary NPNPNP
Silicon Power Bipolar
Transistors
The MJL4281A and MJL4302A are PowerBase power transistors
for high power audio.
350 V CollectorEmitter Sustaining Voltage
Gain Complementary:
Gain Linearity from 100 mA to 5 A
High Gain 80 to 240
h
FE
= 50 (min) @ I
C
= 8 A
Low Harmonic Distortion
High Safe Operation Area 1.0 A/100 V @ 1 Second
High f
T
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
350
Vdc
CollectorBase Voltage
V
CBO
350
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
CollectorEmitter Voltage 1.5 V
V
CEX
350
Vdc
Collector Current Continuous
Collector Current
Peak (Note 1)
I
C
15
30
Adc
Base Current Continuous
I
B
1.5
Adc
Total Power Dissipation @ T
C
= 25
°
C
Derate Above 25
°
C
P
D
230
1.84
Watts
°
C/W
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to
+150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Case
R
JC
0.54
°
C/W
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
Device
Package
Shipping
ORDERING INFORMATION
MJL4281A
TO264
TO264
CASE 340G
STYLE 2
25 Units/Rail
2
1
15 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
350 VOLTS
230 WATTS
3
MARKING DIAGRAM
MJL
4xxxA
LLYWW
MJL4xxxA = Device Code
xxx
= 281 OR 302
LL
= Location Code
Y
= Year
WW
= Work Week
Preferred
devices are recommended choices for future use
and best overall value.
MJL4302A
TO264
25 Units/Rail
1 BASE
2 COLLECTOR
3 EMITTER
http://onsemi.com
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| MJL4302AG | 功能描述:兩極晶體管 - BJT 15A 350V 230W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJLF147-X | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:WIDE BANDWIDTH QUAD JFET INPUT OPERATIONAL AMPLIFIER |
| MJLF155-X | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:JFET INPUT LOW POWER |
| MJL-G-64-2-30 | 制造商:MAXCONN 功能描述:CON,RJ11,R,RA,1R, 6P,2PORT,6C |
| MJLM108A-X | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:OPERATIONAL AMPLIFIERS (SINGLE) |
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