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參數(shù)資料
| 型號： | MJH6286 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | PLASTIC, CASE 340D-01, 3 PIN |
| 文件頁數(shù)： | 23/61頁 |
| 文件大小： | 397K |
| 代理商： | MJH6286 |
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MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
3–823
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.03
0.7
0.2
0.1
0.05
0.02
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
0.05
1.0
3.0
5.0
10
30
50
100
300
500
R
θJC(t) = r(t) RθJC
R
θJC = 0.78°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.1
0.5
0.2
RESIST
ANCE
(NORMALIZED)
1000
0.5
0.3
0.07
0.03
0.01
0.02
2.0
20
200
0.3
0.2
0.1
0.05
0.02
0.01
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMITED
THERMAL LIMITATION
@ TC = 25°C
SINGLE PULSE
TJ = 150°C
0.5 ms
Figure 5. MJH6282, MJH6285
Figure 6. MJH6283, MJH6286
Figure 7. MJH6284, MJH6287
dc
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
50
2.0
I C
,C
OLLE
CT
OR
C
URREN
T
(AMPS
)
0.1
5.0
10
0.5
50
0.2
5.0
20
1.0
20
100
0.05
TJ = 150°C
dc
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
50
2.0
I C
,COLLECT
OR
CURRENT
(AMPS)
0.1
5.0
10
0.5
50
0.2
5.0
20
1.0
20
100
0.05
TJ = 150°C
dc
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
50
2.0
I C
,COLLECT
OR
CURRENT
(AMPS)
0.1
5.0
10
0.5
50
0.2
5.0
20
1.0
20
100
0.05
1.0 ms
5.0 ms
0.1 ms
0.5 ms
1.0 ms
5.0 ms
0.1 ms
0.5 ms
1.0 ms
5.0 ms
0.1 ms
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMITED
THERMAL LIMITATION
@ TC = 25°C
SINGLE PULSE
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMITED
THERMAL LIMITATION
@ TC = 25°C
SINGLE PULSE
FBSOA, FORWARD BIAS SAFE OPERATING AREA
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0
50
60
I C
,COLLECT
OR
CURRENT
(AMPS)
10
20
80
40
10
DUTY CYCLE = 10%
30
20
30
110
100
0
Figure 8. Maximum RBSOA, Reverse Bias
Safe Operating Area
L = 200
H
IC/IB ≥ 100
TC = 25°C
VBE(off) = 0 – 5.0 V
RBE = 47
MJH6282, 6285
MJH6283, 6286
MJH6284, 6287
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5, 6 and 7 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150 _C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJH6287 | 功能描述:達(dá)林頓晶體管 20A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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