參數(shù)資料
型號： MJH6286
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 20 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-218
封裝： PLASTIC, CASE 340D-01, 3 PIN
文件頁數(shù)： 12/61頁
文件大?。?/td> 397K
代理商： MJH6286
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
3–822
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 0.1 Adc, IB = 0)
MJH6282, MJH6285
MJH6283, MJH6286
MJH6284, MJH6287
VCEO(sus)
60
80
100
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
MJH6282, MJH6285
(VCE = 40 Vdc, IB = 0)
MJH6283, MJH6286
(VCE = 50 Vdc, IB = 0)
MJH6284, MJH6287
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
0.5
5.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
2.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc)
DC Current Gain (IC = 20 Adc, VCE = 3.0 Vdc)
hFE
750
100
18,000
—
—
Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc)
Collector–Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc)
VCE(sat)
—
2.0
3.0
Vdc
Base–Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc)
VBE(on)
—
2.8
Vdc
Base–Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc)
VBE(sat)
—
4.0
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
fT
4.0
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJH6282, 83, 84
MJH6285, 86, 87
Cob
—
400
600
pF
Small–Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
300
—
—
SWITCHING CHARACTERISTICS
Typical
Resistive Load
Symbol
NPN
PNP
Unit
Delay Time
td
0.1
0.1
s
Rise Time
VCC = 30 Vdc, IC = 10 Adc
IB1 =IB2 = 100 mA
tr
0.3
0.3
Storage Time
IB1 = IB2 = 100 mA
Duty Cycle = 1.0%
ts
1.0
1.0
Fall Time
tf
3.5
2.0
(1) Pulse test: Pulse Width = 300
s, Duty Cycle = 2.0%.
Figure 2. Switching Times Test Circuit
Figure 3. Darlington Schematic
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
V2
APPROX
+12 V
0
V1
APPROX
– 8.0 V
25
s
tr, tf, ≤ 10 ns
DUTY CYCLE = 1.0%
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse diode and voltage polarities.
TUT
VCC
–30 V
SCOPE
≈ 8.0 k
≈ 50
+ 4.0 V
RB
51
D1
RC
NPN
MJH6282
MJH6283
MJH6284
PNP
MJH6285
MJH6286
MJH6287
COLLECTOR
EMITTER
BASE
相關PDF資料
PDF描述
MJH6283 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-218
MJH6282 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218
MJH6285 20 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-218
MJH6282G 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218
MK10DN512ZVMC10 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA121
相關代理商/技術參數(shù)
參數(shù)描述
MJH6287 功能描述:達林頓晶體管 20A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJH62873601 制造商:LG Corporation 功能描述:SUPPORTER
MJH62873602 制造商:LG Corporation 功能描述:SUPPORTER
MJH62874201 制造商:LG Corporation 功能描述:SUPPORTER
MJH62874202 制造商:LG Corporation 功能描述:SUPPORTER
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