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參數(shù)資料
| 型號： | MJF6107 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS |
| 中文描述： | 7 A, 70 V, PNP, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 217K |
| 代理商： | MJF6107 |
3
Motorola Bipolar Power Transistor Device Data
I
50
μ
s
0.1 ms
dc
10
7
2
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
3
100
3
2
5
0.5
7
20
30
50
0.3
0.2
0.15
70
1
5
10
Figure 4. Active–Region Safe Operating Area
CURRENT LIMIT
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25
°
C
(SINGLE PULSE)
15
1
0.7
0.5 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
C
t
μ
300
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.5
100
50
TJ = 25
°
C
200
70
3
1
Figure 5. Turn–Off Time
Figure 6. Capacitance
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
2.5 A
0.07
IC, COLLECTOR CURRENT (AMP)
V
0.07
IC, COLLECTOR CURRENT (AMP)
0.1
7
500
TJ = 150
°
C
1
10
IB, BASE CURRENT (mA)
0.4
1000
1.2
2
h
100
5 A
0.8
1.6
5
50
30
5
2
30
10
20
VCE = 2 V
300
200
100
70
50
30
20
10
7
0.2
0.3
0.5 0.7
2
3
5
20
200
30
300
50
500
0
IC = 1 A
TJ = 25
°
C
VCC = 30 V
IC/IB = 10
IB1 = IB2
5
0.05
3
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.1
7
1
0.2
0.3
0.5 0.7
2
3
5
ts
tf
Cob
TJ = 25
°
C
25
°
C
–55
°
C
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| MJF6388 | 功能描述:達林頓晶體管 10A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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| MJF6668 | 功能描述:達林頓晶體管 10A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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