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參數(shù)資料
| 型號： | MJF47 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | GT 19C 19#12 PIN RECP |
| 中文描述： | 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 160K |
| 代理商： | MJF47 |
4
Motorola Bipolar Power Transistor Device Data
I
100
μ
s
1 ms
dc
3
2
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
300
100
Figure 7. Maximum Forward Bias Safe
Operating Area
1
0.5
0.3
0.2
0.1
0.05
0.03
20
30
50
200
500
μ
s
CURRENT LIMIT
THERMAL LIMIT @ TC = 25
°
C
SECONDARY BREAKDOWN LIMIT
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 7 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150
°
C. TJ(pk) may be calculated from the data in Fig-
ure 6. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
0
TC, CASE TEMPERATURE (
°
C)
0
50
200
20
40
30
10
100
150
Figure 8. Power Derating
P
0
TA, AMBIENT TEMPERATURE (
°
C)
0
50
200
1
2
1.5
0.5
100
150
Figure 9. Power Derating
P
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