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參數(shù)資料
| 型號： | MJF4343 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | POWER TRANSISTORS COMPLEMENTARY SILICON |
| 中文描述： | 功率晶體管互補(bǔ)性的芯片 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 142K |
| 代理商： | MJF4343 |
2
Motorola Bipolar Power Transistor Device Data
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%.
(2) fT =
hfe
ftest.
OFF CHARACTERISTICS
(IC = 200 mAdc, IB = 0)
160
—
—
1.0
mAdc
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150 C)
(VCE = 80 Vdc, IB = 0)
—
750
Collector–Emitter Cutoff Current
—
1.0
Emitter–Base Cutoff Current
(VCB = Rated VCB, IE = 0)
mAdc
(IC = 16 Adc, IB = 2.0 Adc)
VCE(sat)
(IC = 16 Adc, VCE = 4.0 Vdc)
8.0
15 (Typ)
Vdc
35 (Typ)
Collector–Emitter Saturation Voltage
—
3.9
—
2.0
(IC = 16 Adc, IB = 2.0 Adc)
Vdc
Base–Emitter On Voltage
(IC = 16 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
fT
1.0
—
MHz
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
t
μ
Figure 2. Switching Times Test Circuit
+11 V
25
μ
s
0
–9.0 V
RB
–4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf
≤
10 ns
DUTY CYCLE = 1.0%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
Note:
Reverse polarities to test PNP devices.
3.0
2.0
IC, COLLECTOR CURRENT (AMP)
TJ = 25
°
C
IC/IB = 10
VCE = 30 V
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.2
0.5 0.7
5.0
2.0
1.0
3.0
20
Figure 3. Typical Turn–On Time
10
7.0
tr
0.3
td @ VBE(off) = 5.0 V
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