參數(shù)資料
型號(hào)： MJE2955TAS
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 10 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 12/59頁(yè)
文件大?。?/td> 357K
代理商： MJE2955TAS
MJE2955T MJE3055T
3–629
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0)
VCEO(sus)
60
—
Vdc
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
ICEO
—
700
Adc
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
1.0
5.0
mAdc
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150_C)
ICBO
—
1.0
10
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 4.0 Adc, VCE = 4 0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
100
—
—
Collector–Emitter Saturation Voltage (1)
(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
—
1.1
8.0
Vdc
Base–Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain–Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
fT
2.0
—
MHz
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 20%.
0
TC, CASE TEMPERATURE (°C)
75
100
175
25
50
Figure 2. DC Current Gain
125
150
500
0.01
Figure 3. Power Derating
IC, COLLECTOR CURRENT (AMP)
5.0
0.02
0.05
0.1
0.2
1.0
2.0
10
0.5
300
200
100
50
30
90
0
80
60
40
70
50
h
FE
,DC
C
URREN
T
GAIN
20
10
5.0
TJ = 150°C
25
°C
–55
°C
VCE = 2.0 V
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
30
10
20
MJE3055T
MJE2955T
0.1
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
10
0.2 0.3
2.0 3.0
Figure 4. “On” Voltages
2.0
0
1.6
1.2
0.8
V,
V
OL
TAGE
(
V
OL
T
S
)
0.4
5.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 10
MJE2955T
0.1
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
10
0.2 0.3
2.0
3.0
1.4
0
1.2
1.0
0.8
V
,VOL
TAGE
(VOL
TS)
0.4
5.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
MJE3055T
0.6
0.2
相關(guān)PDF資料
PDF描述
MJE2955TBG 10 A, 60 V, PNP, Si, POWER TRANSISTOR
MJE2955TDW 10 A, 60 V, PNP, Si, POWER TRANSISTOR
MJE3055TBU 10 A, 60 V, NPN, Si, POWER TRANSISTOR
MJE3055TDW 10 A, 60 V, NPN, Si, POWER TRANSISTOR
MJE3055TBA 10 A, 60 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE2955TD127 制造商:Motorola Inc 功能描述:
MJE2955TG 功能描述:兩極晶體管 - BJT 10A 60V 125W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE2955TG-TN3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
MJE2955TTU 功能描述:兩極晶體管 - BJT PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE2955TTU_Q 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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