參數(shù)資料
型號： MJE350
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS
中文描述： 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-225AA
文件頁數(shù)： 1/4頁
文件大?。?/td> 124K
代理商： MJE350
1
Motorola Bipolar Power Transistor Device Data
. . . designed for use in line–operated applications such as low power, line–operated
series pass and switching regulators requiring PNP capability.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc
Excellent DC Current Gain —
hFE = 30–240 @ IC = 50 mAdc
Plastic Thermopad Package
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
VCEO
VEB
IC
PD
Value
300
Unit
Vdc
Emitter–Base Voltage
3.0
Vdc
Collector Current — Continuous
500
mAdc
Total Power Dissipation @ TC = 25 C
20
Watts
JC
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
Symbol
VCEO(sus)
Min
300
Max
—
Unit
Vdc
(VEB = 3.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
hFE
30
240
—
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE350/D
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS
20 WATTS
CASE 77–08
REV 7
相關(guān)PDF資料
PDF描述
MJE350 High Voltage General Purpose Applications
MJE371 4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS
MJE371 POWER TRANSISTOR PNP SILICON
MJF47 GT 19C 19#12 PIN RECP
MJF6107 PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE350 制造商:ON Semiconductor 功能描述:BIP-300V 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, PNP, -300V
MJE350 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-126 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-126
MJE350G 功能描述:兩極晶體管 - BJT 0.5A 300V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE350STU 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE370 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SILICON COMPLEMENTARY POWER TRANSISTORS
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*