參數(shù)資料
型號(hào)： MJE16002
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： NPN SILICON POWER TRANSISTORS
中文描述： 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁數(shù)： 2/10頁
文件大?。?/td> 425K
代理商： MJE16002
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS (1)
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)
—
—
0.25
(VEB = 6.0 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
RBSOA
See Figure 17 or 18
Clamped Inductive SOA with Base Reverse Biased
See Figure 19
ON CHARACTERISTICS (1)
(IC = 1.5 Adc, IB = 0.15 Adc)
MJE16004
(IC = 3.0 Adc, IB = 0.4 Adc, TC = 100 C)
MJE16002
(IC = 3.0 Adc, IB = 0.3 Adc)
—
—
—
—
—
—
1.0
2.5
2.5
(IC = 5.0 Adc, VCE = 5.0 Vdc)
MJE16004
—
—
—
—
—
—
1.5
1.5
1.5
DYNAMIC CHARACTERISTICS
MJE16002
5.0
7.0
—
—
—
—
Rise Time
Storage Time
Duty Cycle
2.0%)
RB2 = 8.0
)
tf
ts
tf
—
100
300
Storage Time
PW = 30
s,
—
1000
3000
Fall Time
VCC = 250 Vdc,
—
—
60
400
300
—
Fall Time
—
130
—
Resistive Load (Table 1)
MJE16004/MJH16004
Delay Time
td
—
30
100
ns
(IC = 3.0 Adc,
IB1 = 0.3 Adc,
(IB2 = 0.6 Adc,
(VBE(off) = 5.0 Vdc)
IC
IB1
*
β
f =
相關(guān)PDF資料
PDF描述
MJE16002 POWER TRANSISTORS(5A,450V,80W)
MJE253 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS
MJE243 POWER TRANSISTORS COMPLEMENTARY SILICON
MJE243 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS
MJE2955T 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE16004 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 450V 5A 3-Pin(3+Tab) TO-220AB 制造商:Rochester Electronics LLC 功能描述:- Bulk
MJE16106 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER TRANSISTORS 8 AMPERES 400 VOLTS 100 AND 125 WATTS
MJE16204 制造商:ON Semiconductor 功能描述:TRANSISTOR, NPN TO-220
MJE170 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE170G 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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