參數(shù)資料
型號: MJE13009R
廠商: Electronic Theatre Controls, Inc.
英文描述: Mini size of Discrete semiconductor elements
中文描述: 迷你型離散半導體元件
文件頁數(shù): 8/10頁
文件大?。?/td> 451K
代理商: MJE13009R
3–683
Motorola Bipolar Power Transistor Device Data
100
1000
230
160
200
320
5
25
630
72
26
10
100
100
800
32
24
4
54
NOTE: All Data recorded In the Inductive Switching Circuit In Table 1.
SWITCHING TIME NOTES
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM
trv = Voltage Rise Time, 10–90% VCEM
tfi = Current Fall Time, 90–10% ICM
tti = Current Tail, 10–2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the turn–off waveforms is shown in
Figure 13 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc) f
Typical inductive switching waveforms are shown in Fig-
ure 14. In general, trv + tfi
tc. However, at lower test cur-
rents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25 C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100 C.
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