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參數(shù)資料
| 型號： | MJE13009 |
| 廠商： | MOSPEC SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS(12A,300-400V,100W) |
| 中文描述： | 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 451K |
| 代理商： | MJE13009 |
3–679
Motorola Bipolar Power Transistor Device Data
V
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
1.2
1.4
0.8
0.4
Figure 5. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.5
1
5
7
10
Figure 6. Collector Saturation Region
0.05
IB, BASE CURRENT (AMP)
0.3
0.07
1.2
0.4
0
50
h
0.1
0.2
0.5
5
Figure 7. Base–Emitter Saturation Voltage
Figure 8. Collector–Emitter Saturation Voltage
Figure 9. Collector Cutoff Region
2
0.8
0.1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
0
TJ = 25
°
C
0.7
3
Figure 10. Capacitance
4K
VR, REVERSE VOLTAGE (VOLTS)
C
Cib
Cob
0.1
,
I
μ
–0.4
–0.2
100
80
60
500
1.6
0.6
IC = 1 A
5
0.2
2
0.3
1
7
0.7
10
0.2
0.5
3
2
5
30
20
7
600
400
200
40
200
100
5
1
0.5
V
V
+0.6
3 A
0.7
1
2
1
0.5
0.7
0.4
0
0.2
0.6
0.3
VCE = 5 V
TJ = 150
°
C
25
°
C
– 55
°
C
20
0.3
+0.4
+0.2
1
10
100
1K
10K
1K
2K
10
50
REVERSE
FORWARD
VCE = 250 V
10
20
5 A
8 A
12 A
3
TJ = –55
°
C
IC/IB = 3
25
°
C
150
°
C
0.3
1
7
0.7
10
0.2
0.5
3
2
5
20
0.1
IC/IB = 3
TJ = 150
°
C
– 55
°
C
25
°
C
TJ = 150
°
C
125
°
C
100
°
C
75
°
C
50
°
C
25
°
C
0.2
2
20
TJ = 25
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13009 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-220 |
| MJE13009_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS |
| MJE13009_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS |
| MJE13009D | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009DG-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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