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| 型號： | MJE13007 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 337K |
| 代理商： | MJE13007 |
5
Motorola Bipolar Power Transistor Device Data
r
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
t, TIME (msec)
0.3
3
30
300 500
1K
2K 3K 5K
10K
20K 30K 50K
100K
Figure 10. Typical Thermal Response for MJF13007
DUTY CYCLE, D = t1/t2
t1
t2
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 3.12
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
1
0.01
0.02
0.05
0.1
0.2
0.5
0.03
0.3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
SINGLE PULSE
SPECIFICATION INFORMATION FOR SWITCHMODE APPLICATIONS
INTRODUCTION
The primary considerations when selecting a power
transistor for SWITCHMODE applications are voltage and
current ratings, switching speed, and energy handling
capability. In this section, these specifications will be
discussed and related to the circuit examples illustrated in
Table 2.(1)
VOLTAGE REQUIREMENTS
Both blocking voltage and sustaining voltage are important
in SWITCHMODE applications.
Circuits B and C in Table 2 illustrate applications that
require high blocking voltage capability. In both circuits the
switching transistor is subjected to voltages substantially
higher than VCC after the device is completely off (see load
line diagrams at IC = Ileakage
≈
0 in Table 2). The blocking
capability at this point depends on the base to emitter
conditions and the device junction temperature. Since the
highest device capability occurs when the base to emitter
junction is reverse biased (VCEV), this is the recommended
and specified use condition. Maximum ICEV at rated VCEV is
specified at a relatively low reverse bias (1.5 Volts) both at
25
°
C and 100
°
C. Increasing the reverse bias will give some
improvement in device blocking capability.
The sustaining or active region voltage requirements in
switching applications occur during turn–on and turn–off. If
the load contains a significant capacitive component, high
current and voltage can exist simultaneously during turn–on
and the pulsed forward bias SOA curves (Figure 6) are the
proper design limits.
For inductive loads, high voltage and current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as a Reverse Bias Safe Operating Area
(Figure 7) which represents voltage–current conditions that
can be sustained during reverse biased turn–off. This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
(1) For detailed information on specific switching applications, see
(1)
Motorola Application Note AN719, AN873, AN875, AN951.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJF13007 | POWER TRANSISTOR |
| MJF13007 | POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS |
| MJE13007 | High Voltage Switch Mode Application |
| MJE13007 | TRIPLE DIFFUSED NPN TRANSISTOR (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER) |
| MJE13007 | POWER TRANSISTORS(8A,300-400V,80W) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13007_06 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-220AB PACKAGE |
| MJE13007_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13007_10 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS |
| MJE13007A | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE13007D | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS |
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