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參數(shù)資料
| 型號： | MJE13007 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 337K |
| 代理商： | MJE13007 |
4
Motorola Bipolar Power Transistor Device Data
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC— VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TC = 25
°
C; TJ(pk) is vari-
able depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
≥
25
°
C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 6 may be found at any case tem-
perature by using the appropriate curve on Figure 8.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by second breakdown.
Use of reverse biased safe operating area data (Figure 7)
is discussed in the applications information section.
1000
10
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
30
70
100
200
50
300
500
Figure 6. Maximum Forward Bias
Safe Operating Area
I
0
100
200
300
400
500
600
700
800
I
VCEV, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS)
Figure 7. Maximum Reverse Bias Switching
Safe Operating Area
20
40
60
TC, CASE TEMPERATURE (
°
C)
80
100
120
140
160
Figure 8. Forward Bias Power Derating
P
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
10 k
r
t, TIME (msec)
Figure 9. Typical Thermal Response for MJE13007
DUTY CYCLE, D = t1/t2
t1
t2
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 1.56
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
20
10
5
1
0.5
0.02
0.01
0.05
0.2
0.1
2
100
50
10
8
6
4
2
0
1
0.8
0.6
0.4
0.2
0
1
0.01
0.02
0.05
0.1
0.2
0.5
0.07
0.7
Extended SOA @ 1
μ
s, 10
μ
s
10
μ
s
1
μ
s
1 ms
5 ms
DC
TC = 25
°
C
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED VCEO
TC
≤
100
°
C
GAIN
≥
4
LC = 500
μ
H
VBE(off)
–5 V
–2 V
0 V
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
SINGLE PULSE
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13007_06 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-220AB PACKAGE |
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| MJE13007A | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE13007D | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS |
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