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參數(shù)資料
| 型號： | MJE13005D-O |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MJE13005D-O |
2009. 2. 26
1/4
SEMICONDUCTOR
TECHNICAL DATA
MJE13005D
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 4
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
MAXIMUM RATING (Ta=25
)
1. BASE
2. COLLECTOR
3. EMITTER
DIM
MILLIMETERS
TO-220AB
1.46
A
B
C
D
E
F
G
H
J
K
M
N
O
0.8 0.1
+
_
2.8 0.1
+
_
2.54 0.2
+
_
1.27 0.1
+
_
1.4 0.1
+
_
13.08 0.3
+
_
3.6
0.2
+
_
+
_
9.9
0.2
+
_
9.2
0.2
+
_
4.5
0.2
+
_
2.4
0.2
15.95 MAX
1.3+0.1/-0.05
0.5+0.1/-0.05
3.7
1.5
A
F
B
J
G
K
M
L
E
I
O
C
H
NN
Q
D
Q
P
123
ELECTRICAL CHARACTERISTICS (Ta=25
)
E
C
B
Equivalent Circuit
*Pulse Test : Pulse Width = 5mS, Duty cycles
10%
Note : hFE Classification R : 18~27, O : 23~35
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
800
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
DC
IC
5
A
Pulse
ICP
10
Base Current
IB
2
A
Collector Power Dissipation (Tc=25
)
PC
75
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Emitter Cut-off Current
IEBO
VEB=9V, IC=0
-
10
A
DC Current Gain
hFE(1)
VCE=5V, IC=1A
18
-
35
hFE(2)
VCE=5V, IC=2A
8
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=0.2A
-
0.5
V
IC=2A, IB=0.5A
-
0.6
IC=4A, IB=1A
-
1
Base-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=0.2A
-
1.2
V
IC=2A, IB=0.5A
-
1.6
Collector Output Capacitance
Cob
VCB=10V, f=1MHz
-
65
-
pF
Transition Frequency
fT
VCE=10V, IC=0.5A
4
-
MHz
Turn-On Time
ton
IB1
150
B1
I
CC
V
=300V
IB2
300
S
I
B1=0.4A, IB2=-1A
2%
OUTPUT
DUTY CYCLE
INPUT
<
=
-
0.15
S
Storage Time
tstg
2
-
5
S
Fall Time
tf
-
0.8
S
Diode Forward Voltage
VF
IF=2A
-
1.6
V
*Reverse recovery tims (di/dt=10A/ S)
trr
IF=0.4A
-
800
-
nS
IF=1A
-
1.4
-
S
IF=2A
-
1.9
-
S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE13005D-R | 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| MJE13005F-O | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| MJE13005F-R | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| MJE13005F | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| MJE13005F | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13005F | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER, FLUORESCENT LIGHT BALLSTOR) |
| MJE13005F_05 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-220IS PACKAGE |
| MJE13005F_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13005G | 功能描述:兩極晶體管 - BJT 4A 400V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE13005G-X-T60-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTORS |
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