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參數(shù)資料
| 型號(hào)： | MJE13005F |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220F, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | MJE13005F |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJE
13005F
NPN Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse test: PW
≤300s, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
4
A
ICP
Collector Current (Pulse)
8
A
IB
Base Current
2
A
PC
Collector Dissipation (TC=25°C)
30
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCEO
Collector-Base Breakdown Voltage
IC = 10mA, IB = 0
400
V
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
1
mA
hFE
*DC Current Gain
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
10
8
60
40
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A
0.5
0.6
1
V
VBE(sat)
*Base-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
1.2
1.6
V
Cob
Output Capacitance
VCB = 10V , f = 0.1MHz
65
pF
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
4
MHz
tON
Turn ON Time
VCC =125V, IC = 2A
IB1 = - IB2 = 0.4A
RL = 125
0.8
s
tSTG
Storage Time
4
s
tF
Fall Time
0.9
s
MJE13005F
High Voltage Switch Mode Applications
High Speed Switching
Suitable for Switching Regulator and Motor Control
1
1.Base
2.Collector
3.Emitter
TO-220F
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| MJE13005L-TQ3-T | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-263AB |
| MJE13005-TQ3-T | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-263AB |
| MJE13005-TQ3-R | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-263AB |
| MJE13005-T60-K | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13005F_05 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-220IS PACKAGE |
| MJE13005F_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13005G | 功能描述:兩極晶體管 - BJT 4A 400V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE13005G-X-T60-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTORS |
| MJE13005G-X-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTORS |
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