- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371115 > MJE13005 (永盛國際集團) NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT) PDF資料下載
參數(shù)資料
| 型號： | MJE13005 |
| 廠商： | 永盛國際集團 |
| 英文描述： | NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT) |
| 中文描述： | NPN硅晶體管（電子變壓器，電源電路交換技術） |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 311K |
| 代理商： | MJE13005 |
6
Motorola Bipolar Power Transistor Device Data
The Safe Operating Area Figures 11 and 12 are specified ratings
for these devices under the test conditions shown.
I
I
5 ms
500
μ
s
1 ms
dc
10
7
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.02
10
400
2
1
5
0.5
0.1
0.05
30
50
70
100
Figure 11. Forward Bias Safe Operating Area
Figure 12. Reverse Bias Switching
Safe Operating Area
0.2
0.01
300
500
MJE13005
5
20
4
0
800
1
100
VCE, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS)
300
TC
≤
100
°
C
IB1 = 2.0 A
500
700
VBE(off) = 9 V
0
2
3
200
400
600
5 V
3 V
1.5 V
MJE13005
200
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 11 is based on TC = 25 C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
≥
25 C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 11 may be found at any case tem-
perature by using the appropriate curve on Figure 13.
TJ(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during re-
verse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 12 gives the complete RBSOA charac-
teristics.
Figure 13. Forward Bias Power Derating
TC, CASE TEMPERATURE (
°
C)
0
40
120
160
0.6
P
SECOND BREAKDOWN
DERATING
1
0.8
0.4
0.2
60
100
140
80
THERMAL
DERATING
20
相關PDF資料 |
PDF描述 |
|---|---|
| MJE13005 | Mini size of Discrete semiconductor elements |
| MJE13005 | GT 54C 54#16 SKT RECP |
| MJE13005 | GT 54C 54#16 SKT RECP |
| MJE13007 | POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS |
| MJE13007 | NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13005 LEADFREE | 功能描述:兩極晶體管 - BJT NPN Fast SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE13005_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 75 WATTS |
| MJE13005_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13005_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTORS |
| MJE13005B | 制造商:WINGS 制造商全稱:Wing Shing Computer Components 功能描述:NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT) |
發(fā)布緊急采購，3分鐘左右您將得到回復。