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參數(shù)資料
| 型號(hào)： | MJE13005 |
| 廠商： | KEC Holdings |
| 英文描述： | GT 54C 54#16 SKT RECP |
| 中文描述： | 三重?cái)U(kuò)散NPN晶體管（開關(guān)穩(wěn)壓器，高壓開關(guān)，高速的DC - DC轉(zhuǎn)換器，熒光燈BALLSTOR） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 311K |
| 代理商： | MJE13005 |
1
Motorola Bipolar Power Transistor Device Data
!
These devices are designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor
Controls, Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:
VCEO(sus) 400 V
Reverse Bias SOA with Inductive Loads @ TC = 100 C
Inductive Switching Matrix 2 to 4 Amp, 25 and 100 C
. . . tc @ 3A, 100 C is 180 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information.
Rating
Collector–Emitter Voltage
Symbol
IC
ICM
Value
400
Unit
Vdc
Collector–Emitter Voltage
700
Vdc
Emitter Base Voltage
9
Vdc
Collector Current — Continuous
— Peak (1)
4
8
Adc
Base Current — Continuous
IB
2
Adc
— Peak (1)
12
Derate above 25 C
16
mW/ C
Total Power Dissipation @ TC = 25 C
PD
75
Watts
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R
θ
JA
R
θ
JC
TL
Max
62.5
Unit
C/W
Thermal Resistance, Junction to Case
1.67
C/W
Maximum Lead Temperature for Soldering
275
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE13005/D
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS
75 WATTS
*Motorola Preferred Device
TO–220AB
REV 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE13005 | GT 54C 54#16 SKT RECP |
| MJE13007 | POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS |
| MJE13007 | NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT) |
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| MJE13007R | Mini size of Discrete semiconductor elements |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13005 LEADFREE | 功能描述:兩極晶體管 - BJT NPN Fast SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE13005_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 75 WATTS |
| MJE13005_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13005_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTORS |
| MJE13005B | 制造商:WINGS 制造商全稱:Wing Shing Computer Components 功能描述:NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT) |
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