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參數(shù)資料
| 型號： | MJE13003 |
| 廠商： | MOSPEC SEMICONDUCTOR CORP. |
| 英文描述： | POWER TRANSISTORS(1.5A,300-400V,40W) |
| 中文描述： | 功率晶體管（1.5A的,300 -為400V，功率40W） |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 304K |
| 代理商： | MJE13003 |
4
Motorola Bipolar Power Transistor Device Data
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE
SWITCHING
OUTPUT WAVEFORMS
T
C
V
T
NOTE
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
5 V
PW
DUTY CYCLE
≤
10%
tr, tf
≤
10 ns
68
1 k
0.001
μ
F
0.02
μ
F
1N4933
270
+5 V
1 k
2N2905
47
1/2 W
100
–VBE(off)
MJE200
T.U.T.
IB
RB
1N4933
1N4933
33
33
2N2222
1 k
MJE210
VCC
+5 V
L
IC
MR826*
Vclamp
*SELECTED FOR
≥
1 kV
VCE
5.1 k
51
+125 V
RC
SCOPE
–4.0 V
D1
RB
TUT
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~200 Turns) #20
GAP for 30 mH/2 A
Lcoil = 50 mH
VCC = 20 V
Vclamp = 300 Vdc
VCC = 125 V
RC = 125
D1 = 1N5820 or Equiv.
RB = 47
IC
VCE
IC(pk)
t
t2
tf CLAMPED
t1 Adjusted to
Obtain IC
Lcoil (ICpk)
t1
≈
VCC
t2
≈
Lcoil (ICpk)
Vclamp
Test Equipment
Scope–Tektronics
475 or Equivalent
+10.3 V
25
μ
s
0
–8.5 V
tr, tf < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
t
VCEor
Vclamp
TIME
t1
tf
Table 1. Test Conditions for Dynamic Performance
trv
TIME
IC
VCE
IB
90% IB1
tsv
ICPK
Vclamp
90% Vclamp
90% IC
tfi
10% Vclamp
10%
ICPK
2% IC
tti
tc
Figure 7. Inductive Switching Measurements
100
1.6
0.26
0.30
0.40
0.36
1
25
1.5
0.10
0.14
0.05
0.16
NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MJE13003_06 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-126 PACKAGE |
| MJE13003_09 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13003_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13003A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MJE SERIES TRANSISTORS |
| MJE13003B | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:High Voltage Fast-switching NPN Power Transistor |
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