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參數(shù)資料
| 型號： | MJE13003 |
| 廠商： | KEC Holdings |
| 英文描述： | GT 37C 37#16 SKT RECP |
| 中文描述： | 三重?cái)U(kuò)散NPN晶體管（開關(guān)穩(wěn)壓器，高壓和高速開關(guān)） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 304K |
| 代理商： | MJE13003 |
5
Motorola Bipolar Power Transistor Device Data
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10–90% Vclamp
tfi = Current Fall Time, 90–10% IC
tti = Current Tail, 10–2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms is
shown in Figure 7 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi
tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25 C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100 C.
t
μ
t
μ
t, TIME OR PULSE WIDTH (ms)
1
0.01
0.02
0.7
0.5
0.2
0.1
0.07
0.05
0.02
r
0.05
1
2
5
10
20
50
100
200
500
Z
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 3.12
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.1
0.5
0.2
R
1000
0.3
0.03
0.03
0.3
3
IC, COLLECTOR CURRENT (AMP)
0.02
0.2
1
0.1
tr
0.5
2
0.05
0.7
td @ VBE(off) = 5 V
Figure 8. Turn–On Time
Figure 9. Turn–Off Time
0.1
0.7
0.5
0.3
0.2
10
7
5
3
2
1
Figure 10. Thermal Response
0.03
0.02
2
1
0.5
0.3
0.2
0.7
IC, COLLECTOR CURRENT (AMP)
0.1
0.5
20
0.3
0.7
0.02
0.2
10
VCC = 125 V
IC/IB = 5
TJ = 25
°
C
0.07
0.05
0.07
0.1
VCC = 125 V
IC/IB = 5
TJ = 25
°
C
0.03
0.07
0.3
0.05
0.03
0.01
ts
tf
RESISTIVE SWITCHING PERFORMANCE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE13003 | POWER TRANSISTORS(1.5A,300-400V,40W) |
| MJE13005 | GT 5C 2#4 3#12 PIN RECP |
| MJE13005 | NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT) |
| MJE13005 | Mini size of Discrete semiconductor elements |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13003_06 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TO-126 PACKAGE |
| MJE13003_09 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13003_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13003A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MJE SERIES TRANSISTORS |
| MJE13003B | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:High Voltage Fast-switching NPN Power Transistor |
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