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參數資料
| 型號： | MJD74C |
| 廠商： | Motorola, Inc. |
| 英文描述： | SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS |
| 中文描述： | 硅功率晶體管6安培100 VOLTS20華特 |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 208K |
| 代理商： | MJD74C |
3
Motorola Bipolar Power Transistor Device Data
6
0.06
IC, COLLECTOR CURRENT (AMP)
0.2
0.4
4
20
7
5
500
h
VCE = 2 V
TJ = 150
°
C
70
50
0.3
1
25
°
C
–55
°
C
10
0.1
0.6
2
6
25
25
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
15
10
TC
5
20
P
Figure 2. Switching Time Test Circuit
IC, COLLECTOR CURRENT (AMP)
0.1
0.07
0.05
t
μ
5
3
2
1
ts
0.7
0.5
0.3
0.2
tf
2
IC, COLLECTOR CURRENT (AMP)
TJ = 25
°
C
VCC = 30 V
IC/IB = 10
t
μ
1
0.7
0.5
0.3
0.2
tr
0.1
0.07
0.05
0.03
0.02
td @ VBE(off)
≈
5 V
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
1.2
0.8
V
2
1.6
0.4
0
0.06
VBE(sat) @ IC/IB = 10
2.5
0
1.5
1
TA
0.5
2
300
200
100
30
0.06
0.2
0.4
4
1
0.1
0.6
2
6
TJ = 25
°
C
VCC = 30 V
IC/IB = 10
IB1 = IB2
0.2
0.4
4
0.3
1
0.1
0.6
2
6
0.06
0.2
0.4
4
1
0.1
0.6
2
Figure 4. Turn–On Time
Figure 5. “On” Voltages
Figure 6. Turn–Off Time
TJ = 25
°
C
VBE @ VCE = 4 V
VCE(sat) @ IC/IB = 10
+11 V
25
μ
s
0
–9 V
RB
–4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf
≤
10 ns
DUTY CYCLE = 1%
51
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
MSB5300 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
REVERSE ALL POLARITIES FOR PNP.
3
TC
TA SURFACE MOUNT
TYPICAL CHARACTERISTICS
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相關代理商/技術參數 |
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| MJD86 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR TRANSISTOR |
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