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參數資料
| 型號： | MJD6039T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 121K |
| 代理商： | MJD6039T4 |
Semiconductor Components Industries, LLC, 2011
March, 2011 Rev. 7
1
Publication Order Number:
MJD6039/D
MJD6039
Darlington Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, convertors,
and power amplifiers.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Monolithic Construction With Builtin BaseEmitter Shunt Resistors
High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0Adc
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C
u 400 V
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
CollectorEmitter Voltage
VCEO
80
Vdc
CollectorBase Voltage
VCB
80
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current
Continuous
Collector Current
Peak
IC
4
8
Adc
Base Current
IB
100
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
20
0.16
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
1.75
0.014
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
6.25
°C/W
Thermal Resistance, JunctiontoAmbient
(Note 1)
RqJA
71.4
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
SILICON
POWER TRANSISTORS
4 AMPERES,
80 VOLTS, 20 WATTS
MARKING DIAGRAM
A
= Assembly Location
Y
= Year
WW = Work Week
J6039 = Device Code
G
= PbFree Package
DPAK
CASE 369C
STYLE 1
AYWW
J
6039G
1 2
3
4
Device
Package
Shipping
ORDERING INFORMATION
MJD6039T4
DPAK
2500 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
MJD6039T4G
DPAK
(PbFree)
2500 / Tape & Reel
COLLECTOR 2,4
BASE
1
EMITTER 3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD6039T4G | 功能描述:達林頓晶體管 2A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD61865501 | 制造商:LG Corporation 功能描述:Strap,Head |
| MJD74C | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS |
| MJD86 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR TRANSISTOR |
| MJD86R | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR TRANSISTOR |
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