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參數(shù)資料
| 型號(hào)： | MJD907 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | IPAK-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 40K |
| 代理商： | MJD907 |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD907
PNP Silicon Darlington Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
- 60
V
VCEO
Collector-Emitter Voltage
- 40
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current(DC)
- 3
A
IB
Base Current
- 0.3
A
PC
Collector Dissipation (TC=25°C)
15
W
Collector Dissipation (Ta=25°C)
1
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCEO
Collector- Emitter Breakdown Voltage
IC = - 25mA, IB = 0
- 40
V
ICBO
Collector Cut-off Current
VCB = - 60V, IE = 0
- 20
A
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
- 2.5
A
hFE1
hFE2
DC Current Gain
VCE = - 2V, IC = - 1A
VCE = - 2V, IC = - 3A
2000
1000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = - 2A, IB = - 4mA
- 1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = - 2A, IB = - 4mA
- 2
V
tON
Turn ON Time
VCC = - 30V, IC = - 3A
IB1 = - IB2 = - 6mA
RL = 10
0.3
s
tSTG
Storage Time
0.6
s
tF
Fall Time
0.25
s
MJD907
Power Amplifier Applications
High DC Current Gain
Low Collector-Emitter Saturation Voltage
Built-in a Damper Diode at E-C
Darlington TR
Complement to MJD1222
1. Base 2. Collector 3. Emitter
I-PAK
1
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