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參數(shù)資料
| 型號： | MJD49T4 |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 143K |
| 代理商： | MJD49T4 |
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
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MJD49T4
6/6
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參數(shù)描述 |
|---|---|
| MJD50 | 功能描述:兩極晶體管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD50_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor |
| MJD50-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
| MJD50G | 功能描述:兩極晶體管 - BJT 1A 400V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD50T4 | 功能描述:兩極晶體管 - BJT NPN Hi-Volt Fast Sw RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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