型號(hào): | MJD45H11T4 |
廠商: | MOTOROLA INC |
元件分類: | 功率晶體管 |
英文描述: | SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS |
中文描述: | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
文件頁(yè)數(shù): | 5/6頁(yè) |
文件大?。?/td> | 192K |
代理商: | MJD45H11T4 |
相關(guān)PDF資料 |
PDF描述 |
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MJD45H11TM | General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications |
MJD45H11 | General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications |
MJD74C | SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS |
MJE13003 | GT 6C 3#4 3#16 PIN RECP |
MJE13003 | GT 35C 35#16 SKT RECP BOX |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MJD45H11-T4 | 制造商:STMicroelectronics 功能描述: |
MJD45H11T4-A | 制造商:STMicroelectronics 功能描述: |
MJD45H11T4G | 功能描述:兩極晶體管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
MJD45H11T4G | 制造商:ON Semiconductor 功能描述:POWER TRANSISTOR PNP -80V D-PAK |
MJD45H11T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 80 V 8 A PNP Complementary Power Transistor - TO-252 |