參數(shù)資料
型號: MJD45H11G
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: SILICON POWER TRANSISTORS
中文描述: 8 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3
文件頁數(shù): 3/6頁
文件大小: 192K
代理商: MJD45H11G
3
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
0.05
r
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 6.25
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
R
0.7
0.5
Figure 1. Thermal Response
0.1
0.03
0.02
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
SINGLE PULSE
D = 0.5
0.1
0.02
0.01
0.05
I
20
1
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.02
3
100
2
0.5
0.3
5
3
0.1
THERMAL LIMIT @ TC = 25
°
C
WIRE BOND LIMIT
5
7
20
70
10
100
μ
s
dc
0.05
1
10
50
30
Figure 2. Maximum Forward Bias
Safe Operating Area
1 ms
500
μ
s
5 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in Fig-
ure 1. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
25
25
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
20
15
10
5
P
2.5
0
2
1.5
1
0.5
TA
TC
Figure 3. Power Derating
TC
TA
SURFACE
MOUNT
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