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參數(shù)資料
| 型號： | MJD45H11 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Power Transistors(互補功率晶體管) |
| 中文描述： | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 76K |
| 代理商： | MJD45H11 |
MJD44H11 (NPN) MJD45H11 (PNP)
http://onsemi.com
4
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
0.05
r
R
JC(t)
= r(t) R
JC
R
JC
= 6.25
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
R
0.7
0.5
Figure 1. Thermal Response
0.1
0.03
0.02
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
SINGLE PULSE
D = 0.5
0.1
0.02
0.01
0.05
I
20
1
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
0.02
3
100
2
0.5
0.3
5
3
0.1
THERMAL LIMIT @ T
C
= 25
°
C
WIRE BOND LIMIT
5
7
20
70
10
100 s
dc
0.05
1
10
50
30
Figure 2. Maximum Forward Bias
Safe Operating Area
1ms
500 s
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. T
J(pk)
may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
25
25
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
20
15
10
5
P
2.5
0
2
1.5
1
0.5
T
A
T
C
Figure 3. Power Derating
T
C
T
A
SURFACE
MOUNT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD45H11_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor |
| MJD45H11-001 | 功能描述:兩極晶體管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD45H11-001G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD45H11-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS |
| MJD45H11-1G | 功能描述:兩極晶體管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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