- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371115 > MJD32-1 (MOTOROLA INC) SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS PDF資料下載
參數(shù)資料
| 型號(hào)： | MJD32-1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS |
| 中文描述： | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 205K |
| 代理商： | MJD32-1 |
4
Motorola Bipolar Power Transistor Device Data
V
5
IB, BASE CURRENT (mA)
10
20
1.2
0.4
0
50
100
200
500
2
0.8
TJ = 25
°
C
1.6
2
1
IC = 0.3 A
1000
Figure 7. Collector Saturation Region
300
VR, REVERSE VOLTAGE (VOLTS)
C
Ceb
0.1
200
100
0.5
1
10
40
TJ = +25
°
C
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
0.05
r
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 8.33
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
Figure 8. Capacitance
0.7
0.5
D = 0.5
Figure 9. Thermal Response
1 A
3 A
70
50
30
0.2 0.3
2
3
5
20 30
Ccb
0.1
0.03
0.02
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
0.1
0.05
0.01
I
10
1.5
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
3
150
1
0.3
0.2
3
2
0.05
0.03
0.02
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
5
7
20
70
10
TC = 25
°
C SINGLE PULSE
TJ = 150
°
C
100
μ
s
1 ms
dc
2
0.1
0.5
5
Figure 10. Active Region Safe Operating Area
50
30
100
500
μ
s
MJD31, MJD32
MJD31C, MJD32C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in Fig-
ure 9. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD32T4 | SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS |
| MJD32C | General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications |
| MJD340 | SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS |
| MJD350 | SILICON POWER TRANSISTORS |
| MJD350T4 | SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD32B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD32BT4 | 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32BTF | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32C | 功能描述:兩極晶體管 - BJT 3A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32C1 | 功能描述:兩極晶體管 - BJT 3A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。