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參數(shù)資料
| 型號： | MJD31C |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Power Transistors(補償型功率晶體管) |
| 中文描述： | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C, DPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | MJD31C |
Semiconductor Components Industries, LLC, 2005
June, 2005 Rev. 6
1
Publication Order Number:
MJD31/D
MJD31, MJD31C (NPN),
MJD32, MJD32C (PNP)
MJD31C and MJD32C are Preferred Devices
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
Machine Model, C
PbFree Packages are Available
8000 V
400 V
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
CollectorEmitter Voltage
MJD31, MJD32
MJD31C, MJD32C
V
CEO
40
100
Vdc
CollectorBase Voltage
MJD31, MJD32
MJD31C, MJD32C
V
CB
40
100
Vdc
EmitterBase Voltage
V
EB
I
C
5
Vdc
Collector Current Continuous
Peak
3
5
Adc
Base Current
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
I
B
P
D
1
Adc
15
0.12
W
W/
°
C
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
1.56
0.012
W
W/
°
C
Operating and Storage Junction
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
T
J
, T
stg
65 to
+150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°
C/W
°
C/W
°
C
Thermal Resistance, JunctiontoCase
R
JC
R
JA
T
L
8.3
Thermal Resistance, JunctiontoAmbient*
80
Lead Temperature for Soldering Purposes
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
260
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
DPAK3
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING
DIAGRAMS
Y
WW
xx
G
= Year
= Work Week
= 1, 1C, 2, or 2C
= PbFree Package
1 2
3
4
YWW
J3xxG
1
23
4
YWW
J3xxG
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD31C1 | 功能描述:兩極晶體管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C-1 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, TO-252VAR |
| MJD31C-13 | 功能描述:兩極晶體管 - BJT 100V 5A NPN SMT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C1G | 功能描述:兩極晶體管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 100V IPAK-4 |
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