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參數(shù)資料
| 型號： | MJD31 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS |
| 中文描述： | 3 A, 40 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 205K |
| 代理商： | MJD31 |
4
Motorola Bipolar Power Transistor Device Data
V
5
IB, BASE CURRENT (mA)
10
20
1.2
0.4
0
50
100
200
500
2
0.8
TJ = 25
°
C
1.6
2
1
IC = 0.3 A
1000
Figure 7. Collector Saturation Region
300
VR, REVERSE VOLTAGE (VOLTS)
C
Ceb
0.1
200
100
0.5
1
10
40
TJ = +25
°
C
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
0.05
r
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 8.33
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
Figure 8. Capacitance
0.7
0.5
D = 0.5
Figure 9. Thermal Response
1 A
3 A
70
50
30
0.2 0.3
2
3
5
20 30
Ccb
0.1
0.03
0.02
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
0.1
0.05
0.01
I
10
1.5
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
3
150
1
0.3
0.2
3
2
0.05
0.03
0.02
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
5
7
20
70
10
TC = 25
°
C SINGLE PULSE
TJ = 150
°
C
100
μ
s
1 ms
dc
2
0.1
0.5
5
Figure 10. Active Region Safe Operating Area
50
30
100
500
μ
s
MJD31, MJD32
MJD31C, MJD32C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in Fig-
ure 9. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
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