參數資料
型號: MJD32
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS
中文描述: 3 A, 40 V, PNP, Si, POWER TRANSISTOR
文件頁數: 1/6頁
文件大?。?/td> 205K
代理商: MJD32
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
MAXIMUM RATINGS
MJD31
MJD31C
Derate above 25 C
0.12
W/ C
Derate above 25 C
0.012
W/ C
Operating and Storage Junction
TJ, Tstg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
R
θ
JA
TL
Max
8.3
Unit
C/W
Thermal Resistance, Junction to Ambient*
80
C/W
Lead Temperature for Soldering Purposes
260
C
* These ratings are applicable when surface mounted on the minimum pad size recommended.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD31/D
CASE 369A–13
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
*Motorola Preferred Device
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
REV 1
相關PDF資料
PDF描述
MJD32-1 SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS
MJD32T4 SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS
MJD32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
MJD340 SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
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相關代理商/技術參數
參數描述
MJD32/32C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications
MJD32-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS
MJD32B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJD32BT4 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD32BTF 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2