參數(shù)資料
型號: MJD243
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Complementary Silicon Plastic Power Transistor(互補型硅功率晶體管)
中文描述: 4 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, CASE 369C-01, DPAK-3
文件頁數(shù): 6/7頁
文件大小: 97K
代理商: MJD243
MJD243 (NPN), MJD253 (PNP)
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK3
CASE 369C
ISSUE O
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
T
SEATING
PLANE
Z
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
MIN
0.235
0.250
0.086
0.027
0.018
0.037
0.180 BSC
0.034
0.018
0.102
0.090 BSC
0.180
0.025
0.020
0.035
0.155
MAX
0.245
0.265
0.094
0.035
0.023
0.045
MIN
5.97
6.35
2.19
0.69
0.46
0.94
4.58 BSC
0.87
0.46
2.60
2.29 BSC
4.57
0.63
0.51
0.89
3.93
MAX
6.22
6.73
2.38
0.88
0.58
1.14
MILLIMETERS
INCHES
0.040
0.023
0.114
1.01
0.58
2.89
0.215
0.040
0.050
5.45
1.01
1.27
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
相關PDF資料
PDF描述
MJD253 Complementary Silicon Plastic Power Transistor(互補型功率晶體管)
MJD253T4 Complementary Silicon Plastic Power Transistor
MJD31 Complementary Power Transistors(補償型功率晶體管)
MJD31C Complementary Power Transistors(補償型功率晶體管)
MJD32 Complementary Power Transistors(互補型功率晶體管)
相關代理商/技術參數(shù)
參數(shù)描述
MJD243_07 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications
MJD243_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistor
MJD243-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS
MJD243G 功能描述:兩極晶體管 - BJT 4A 100V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD243G 制造商:ON Semiconductor 功能描述:Bipolar Transistor