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參數(shù)資料
| 型號： | MJD148T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon Power Transistor |
| 中文描述： | 4 A, 45 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C, DPAK-3 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 69K |
| 代理商： | MJD148T4 |
MJD148
http://onsemi.com
5
10
1
Figure 7. Maximum Rated Forward Bias
V
CE
, COLLECTOREMITTER VOLTAGE (V)
5
3
2
0.5
0.3
0.2
0.01
5
10
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
T
C
= 25
°
C SINGLE PULSE, D
≤
0.1%
T
J
= 150
°
C
I
dc
500 s
0.05
0.03
0.02
2
3
1 ms
20
30
50 70
1
7
0.1
5 ms
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on T
J(pk)
= 150
°
C; T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
150
°
C. T
J(pk)
may be calculated from the data in
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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| MJD18002D2T4G | 功能描述:兩極晶體管 - BJT BIP NPN 2A 450V TR F RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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