參數(shù)資料
型號(hào)： MJ3000
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝： METAL, TO-3, 2 PIN
文件頁(yè)數(shù)： 12/59頁(yè)
文件大?。?/td> 355K
代理商： MJ3000
MJ2500 MJ2501 MJ3000 MJ3001
3–426
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
MJ2500, MJ3000
(IC = 100 mAdc, IB = 0)
MJ2501, MJ3001
V(BR)CEO
60
80
—
Vdc
Collector–Emitter Leakage Current
(VEB = 60 Vdc, RBE = 1.0 k ohm)
MJ2500, MJ3000
(VEB = 80 Vdc, RBE = 1.0 k ohm)
MJ2501, MJ3001
(VEB = 60 Vdc, RBE = 1.0 k ohm, TC = 150_C)
MJ2500, MJ3000
(VEB = 80 Vdc, RBE = 1.0 k ohm, TC = 150_C)
MJ2501, MJ3001
ICER
—
1.0
5.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
2.0
mAdc
Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0)
MJ2500, MJ3000
(VCE = 40 Vdc, IB = 0)
MJ2501, MJ3001
ICEO
—
1.0
mAdc
ON CHARACTERISTICS(1)
DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)
hFE
1000
—
—
Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 20 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
VCE(sat)
—
2.0
4.0
Vdc
Base Emitter Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc)
VBE(on)
—
3.0
Vdc
(1)Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
10
h
FE
,DC
C
URREN
T
GAIN
TJ = 150°C
25
°C
–55
°C
VCE = 3.0 Vdc
500
200
100
50,000
5000
20,000
2000
1000
10,000
5.0
Figure 3. Small–Signal Current Gain
f, FREQUENCY (Hz)
500
300
100
3000
h
FE
,SMALL–SIGNAL
CURRENT
GAIN
200
2000
1000
30
50
TC = 25°C
VCE = 3.0 Vdc
IC = 5.0 Adc
104
103
105
106
50
IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
V
,VOL
TAGE
(VOL
TS)
Figure 4. “On” Voltages
VCE(sat) @ IC/IB = 250
TJ = 25°C
VBE @ VCE = 3.0 V
0.01
0.2
0.5
0.05
1.0
2.0
10
5.0
3.5
2.5
2.0
1.5
1.0
0
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25°C
BONDING WIRE LIMITED
10
1.0
Figure 5. DC Safe Operating Area
7.0
2.0
10
20
100
TJ = 200°C
0.2
3.0
0.5
I C
,COLLECT
OR
CURRENT
(AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
30
70
1.0
0.1
2.0
50
3.0
5.0 7.0
MJ2500, MJ3000
MJ2501, MJ3001
0.5
3.0
0.1
0.02
0.7
0.3
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown.
Safe operating area curves indicate IC – VCE limits of the
transistor that must be observed for reliable operation; e.g.,
the transistor must not be subjected to greater dissipation
than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
相關(guān)PDF資料
PDF描述
MJ2500 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
MJ3281A 15 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA
MJ1302A 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-204AA
MJ410 5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA
MJ413 10 A, 325 V, NPN, Si, POWER TRANSISTOR, TO-204AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ3001 功能描述:達(dá)林頓晶體管 NPN Darlington Power LTB 9-2009 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJ3001 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-3
MJ3011F 制造商:Ohmite Mfg Co 功能描述:
MJ3011FE-R52 制造商:Ohmite Mfg Co 功能描述:Metal Film Resistors 1/8W 3.01K Ohm 1% 200 Volt
MJ3040 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DARLINGTON 10 AMPERE POWER TRANSISTORS NPN SILICON
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