參數(shù)資料
型號(hào)： MJ11013
廠商： 永盛國(guó)際集團(tuán)
元件分類： 基準(zhǔn)電壓源/電流源
英文描述： Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators
中文描述： 雙通道高效率，低噪聲，同步降壓型開關(guān)穩(wěn)壓器
文件頁數(shù)： 3/4頁
文件大?。?/td> 157K
代理商： MJ11013
3
Motorola Bipolar Power Transistor Device Data
30 k
20 k
0.3
Figure 2. DC Current Gain (1)
IC, COLLECTOR CURRENT (AMP)
0.5 0.7
1
2
3
10
20
30
7 k
5 k
3 k
2 k
700
500
Figure 3. Small–Signal Current Gain
h
2
1
10
f, FREQUENCY (kHz)
20
30
50
70
200
300
500
1.0 k
0.2
0.05
0.02
0.01
10 k
h
VCE = 5 Vdc
TJ = 25
°
C
300
5
7
100
5
0.1
Figure 4. “On” Voltages (1)
IC, COLLECTOR CURRENT (AMP)
100
0
VBE(sat)
Figure 5. Active Region DC Safe Operating Area
PNP MJ11013, MJ11015
NPN MJ11012, MJ11014, MJ11016
V
4
3
2
1
50
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
3
5
10
20
200
10
5
0.01
I
2
1
0.2
0.1
0.05
0.5
0.02
50
TJ = 25
°
C
IC/IB = 100
VCE = 3 Vdc
IC = 10 mAdc
TJ = 25
°
C
0.1
0.5
0.005
700
MJ11012
MJ11013, MJ11014
MJ11015, MJ11016
2
7
30
70
100
2
20
50
0.2
0.5
1
10
5
VCE(sat)
PNP MJ11013, MJ11015
NPN MJ11012, MJ11014, MJ11016
PNP MJ11013, MJ11015
NPN MJ11012, MJ11014, MJ11016
BONDING WIRE LIMITATION
THERMAL LIMITATION @ TC = 25
°
C
SECOND BREAKDOWN LIMITATION
There are two limitations on the power handling ability of a
transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE lim-
its of the transistor that must be observed for reliable opera-
tions e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
相關(guān)PDF資料
PDF描述
MJ11014 Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators
MJ11015 Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators
MJ11013 DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON
MJ11014 DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON
MJ11014 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ11014 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 30 Amp Darlington Transistors NPN
MJ11015 功能描述:達(dá)林頓晶體管 30A 120V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJ11015 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3
MJ11015_08 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Current Complementary Silicon Transistors
MJ11015G 功能描述:達(dá)林頓晶體管 30A 120V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
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