參數(shù)資料
型號(hào)： MJ1000
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： Medium-Power Complementary Silicon Transistors
中文描述： 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
文件頁數(shù)： 2/4頁
文件大?。?/td> 139K
代理商： MJ1000
2
Motorola Bipolar Power Transistor Device Data
(TC = 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
(VCB = 60 Vdc, RBE = 1.0k ohm)
(VCB = 60 Vdc, RBE = 1.0k ohm, TC = 150 C)
ON CHARACTERISTICS
—
—
1.0
5.0
MJ1000
MJ1000
—
500
DC Current Gain(1)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
MJ1001
hFE
—
Collector Emitter Saturation Voltage(1)
(IC = 30 Adc, IB = 12 mAdc)
VCE(sat)
1000
—
—
2.0
Vdc
I
1.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
2.0
10
5.0
1.0
0.7
0.5
3.5
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
3.0
2.5
2.0
1.5
1.0
0.5
0.3
0.2
50,000
0.01
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
50
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
10,000
5000
2000
Figure 3. Small–Signal Current Gain
f, FREQUENCY (Hz)
30
1000
20,000
h
1000
500
200
TJ = 200
°
C
50
0.01
0.02
0.05
0.5
1.0
10
2.0
5.0
0.2
3000
2000
500
0
25
°
C
TC = 25
°
C
TJ = 25
°
C
TJ = 150
°
C
h
100
VBE(sat) @ IC/IB = 250
SECONDARY BREAKDOWN
LIMITATION
THERMAL LIMITATION @ TC = 25
°
C
BONDING WIRE LIMITATION
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
V
300
200
100
50
VCE = 3.0 Vdc
IC = 3.0 Adc
MJ1000
0.1
7.0
20
100
30
70
5.0
3.0
10
7.0
3.0
2.0
0.1
–55
°
C
VCE = 3.0 V
103
106
105
104
MJ1001
There we two limitations on the power handling ability of a
transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE lim-
its of the transistor that must be observed for reliable opera-
tion; e.g., the transistor must not be subjected to greater
相關(guān)PDF資料
PDF描述
MJ1001 Medium-Power Complementary Silicon Transistors
MJ10012 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS
MJ10012 NPN SILICON POWER DARLINGTON TRANSISTORS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ1000_12 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:COMPLEMENTARY POWER DARLINGTONS
MJ10000 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 450V 20A T 制造商:SOLID STATE 功能描述:DARLINGTON TRANSISTOR, NPN, 450V, 20A, T 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR, NPN, 450V, 20A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:450V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:600; Operating Temperature Min:-65C ;RoHS Compliant: Yes
MJ10001 制造商:NTE Electronics 功能描述:TRANSISTOR NPN 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; Operating Temperature Max:200C ;RoHS Compliant: Yes
MJ10002 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
MJ10003 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
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