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參數(shù)資料
| 型號(hào)： | MJ10009 |
| 廠商： | MOSPEC SEMICONDUCTOR CORP. |
| 英文描述： | POWER TRANSISTORS(20A,400-500V,175W) |
| 中文描述： | 功率晶體管（20A條,400 - 500V及175W的） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 235K |
| 代理商： | MJ10009 |
3
Motorola Bipolar Power Transistor Device Data
V
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
20
0.2
1
2
200
100
60
Figure 2. Collector Saturation Region
3
0.03
IB, BASE CURRENT (AMP)
1
0.05
0.1
0.2
0.5
1
2
3
2.6
2.2
1.8
1.4
TJ = 25
°
C
400
h
TJ = 150
°
C
VCE = 5 V
40
0.5
5
10
20
25
°
C
IC = 5 A
10 A
20 A
V
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
104
103
102
101
,
I
100
0
+0.2
–0.2
VCE = 250 V
TJ = 125
°
C
100
°
C
25
°
C
Figure 3. Collector–Emitter Saturation Voltage
2.4
0.2
IC, COLLECTOR CURRENT (AMP)
0.4
0.3
0.5
0.7
1
2
5
20
2
1.6
1.2
0.8
IC/IB = 10
TJ = – 55
°
C
7
3
Figure 4. Base-Emitter Voltage
2.8
IC, COLLECTOR CURRENT (AMP)
0.80.2 0.3
0.5
0.7
2.4
2
1.6
1.2
0.4
Figure 6. Output Capacitance
VR, REVERSE VOLTAGE (VOLTS)
50
1
2
20
60
10
0.6
200
70
TJ = 25
°
C
Cob
1000
500
100
100
200
400
V
10
25
°
C
150
°
C
2
5
20
7
3
10
1
25
°
C
150
°
C
25
°
C
TJ = – 55
°
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 3 V
75
°
C
μ
10–1
+0.4
+0.8
+0.6
4
6
40
700
300
C
REVERSE
FORWARD
TYPICAL CHARACTERISTICS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10009 | 制造商:NTE Electronics 功能描述:T-NPN SI- PO DARL SW |
| MJ1000F | 制造商:Ohmite Mfg Co 功能描述: |
| MJ1000FE | 制造商:Ohmite Mfg Co 功能描述:Resistor;Metal Film;Res 100 Ohms;Pwr-Rtg 0.125 W;Tol 1%;Axial;Epoxy |
| MJ1000FE-R52 | 制造商:Ohmite Mfg Co 功能描述:Metal Film Resistors 1/8W 100 Ohm 1% 200 Volt |
| MJ1001 | 制造商: 功能描述: 制造商:Motorola Inc 功能描述: 制造商:undefined 功能描述: |
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