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參數(shù)資料
| 型號： | MJ10009 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON POWER DARLINGTON TRANSISTORS |
| 中文描述： | 20 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 235K |
| 代理商： | MJ10009 |
5
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
SWITCHING TIMES NOTE
(continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222.
PSWT = 1/2 VCC IC (tc) f
Typical inductive switching waveforms are shown in Fig-
ure 7. In general, trv + tfi
rents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25 C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100 C.
tc. However, at lower test cur-
2
Figure 8. Turn-On Time
IC, COLLECTOR CURRENT (AMP)
t
μ
0.1
VCC = 250 V
IC/IB = 20
TJ = 25
°
C
td
tr
1.0
Figure 9. Turn-Off Time
IC, COLLECTOR CURRENT (AMP)
t
μ
0.5
0.1
0.05
VCC = 250 V
IC/IB = 20
VBE(off) = 5 V
TJ = 25
°
C
tf
ts
0.2
tP = 25
μ
s, DUTY CYCLE
2%
tP = 25
μ
s, DUTY CYCLE
2%
1
0.2
0.5
20
1
5
2
10
20
1
5
2
10
RESISTIVE SWITCHING PERFORMANCE
Figure 10. Thermal Response
t, TIME (ms)
1.0
0.7
0.5
0.01
0.01
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1 k
500
Z
θ
JC (t) = r(t) R
θ
JC
R
θ
JC = 1.0
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r
(
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PDF描述 |
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| MJ10009 | POWER TRANSISTORS(20A,400-500V,175W) |
| MJ1000 | Medium-Power Complementary Silicon Transistors |
| MJ1001 | Medium-Power Complementary Silicon Transistors |
| MJ10012 | 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS |
| MJ10012 | NPN SILICON POWER DARLINGTON TRANSISTORS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10009 | 制造商:NTE Electronics 功能描述:T-NPN SI- PO DARL SW |
| MJ1000F | 制造商:Ohmite Mfg Co 功能描述: |
| MJ1000FE | 制造商:Ohmite Mfg Co 功能描述:Resistor;Metal Film;Res 100 Ohms;Pwr-Rtg 0.125 W;Tol 1%;Axial;Epoxy |
| MJ1000FE-R52 | 制造商:Ohmite Mfg Co 功能描述:Metal Film Resistors 1/8W 100 Ohm 1% 200 Volt |
| MJ1001 | 制造商: 功能描述: 制造商:Motorola Inc 功能描述: 制造商:undefined 功能描述: |
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