參數(shù)資料
型號： MJ10000
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 20 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝： METAL, TO-3, 2 PIN
文件頁數(shù)： 12/63頁
文件大?。?/td> 394K
代理商： MJ10000
MJ10000
3–434
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (2)
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 250 mA, IB = 0, Vclamp = Rated VCEO)
MJ10000
VCEO(sus)
350
—
—
Vdc
Collector–Emitter Sustaining Voltage (Table 1, Figure 12)
IC = 2 A, Vclamp = Rated VCEX, TC = 100_C
MJ10000
IC = 10 A, Vclamp = Rated VCEX, TC = 100_C
MJ10000
VCEX(sus)
400
275
—
—
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEV
—
—
0.25
5
mAdc
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 , TC = 100_C)
ICER
—
—
5
mAdc
Emitter Cutoff Current
(VEB = 8 Vdc, IC = 0)
IEBO
—
—
150
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
IS/b
See Figure 11
Adc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 10 Adc, VCE = 5 Vdc)
hFE
50
40
—
600
400
—
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 400 mAdc)
(IC = 20 Adc, IB = 1 Adc)
(IC = 10 Adc, IB = 400 mAdc, TC = 100_C)
VCE(sat)
—
—
1.9
3
2
Vdc
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 400 mAdc, TC = 100_C)
VBE(sat)
—
—
2.5
Vdc
Diode Forward Voltage (1)
(IF = 10 Adc)
Vf
—
3
5
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1 MHz)
hfe
10
—
—
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
Cob
100
325
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(VCC = 250 Vdc, IC = 10 A,
Rise Time
IB1 = 400 mA, VBE(off) = 5 Vdc, tp = 50 s,
Storage Time
Duty Cycle
v 2%)
Fall Time
td
tr
ts
tf
—
0.12
0.20
1.5
1.1
0.2
0.6
3.5
2.4
s
Inductive Load, Clamped (Table 1)
Storage Time
(IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA,
Crossover Time
VBE(off) = 5 Vdc, TC = 100_C)
tsv
tc
—
3.5
1.5
5.5
3.7
s
Storage Time
(IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA,
Crossover Time
VBE(off) = 5 Vdc, TC = 25_C)
tsv
tc
—
1.0
0.7
—
s
(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
(1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode Is comparable to that of typical fast recovery rectifiers.
(2) Pulse Test: Pulse Width = 300
s, Duty Cycle v 2%.
相關(guān)PDF資料
PDF描述
MJ1000 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
MJ1001 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA
MJ10022 40 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AE
MJ3000 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
MJ2500 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ10001 制造商:NTE Electronics 功能描述:TRANSISTOR NPN 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V 制造商:NTE Electronics 功能描述:TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:50; Operating Temperature Min:-65C; Operating Temperature Max:200C ;RoHS Compliant: Yes
MJ10002 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
MJ10003 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor
MJ10004 制造商:SPC Multicomp 功能描述:DARLINGTON TRANSISTOR TO-3
MJ10004 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*