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參數(shù)資料
| 型號： | MIXA20WB1200TMH |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 28 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-23 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 301K |
| 代理商： | MIXA20WB1200TMH |
2010 IXYS All rights reserved
1 - 8
20101103b
MIXA20WB1200TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Converter - Brake - Inverter
Module
XPT IGBT
Three Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
V
RRM
= 1600 V V
CES = 1200 V
V
CES = 1200 V
I
DAVM25 =
100 A I
C25
= 28 A I
C25
= 28 A
I
FSM
= 270 A V
CE(sat) = 1.8 V VCE(sat) = 1.8 V
Pin configuration see outlines.
Features:
High level of integration - only one
power semiconductor module required
for the whole drive
Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 sec.
- very low gate charge
- square RBSOA @ 3x I
C
- low EMI
Thin wafer technology combined with
the XPT design results in a competitive
low V
CE(sat)
Temperature sense included
SONIC diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
AC motor drives
Pumps, Fans
Washing machines
Air-conditioning system
Inverter and power supplies
Package:
"Mini" package
Assembly height is 17 mm
Insulated base plate
Pins suitable for wave soldering and
PCB mounting
Assembly clips available
- IXKU 5-505 screw clamp
- IXRB 5-506 click clamp
UL registered E72873
Part name (Marking on product)
MIXA20WB1200TMH
E 72873
G1
G3
G5
G2
G4
G6
U
V
W
NTC1
L1
L2
L3
N
EU
EV
EW
P P1
B
NB
D8
D12
D9
D13
D7
T7
NTC2
GB
D1
D3
D5
D2
D4
D6
T1
T3
T5
T2
T4
T6
D10
D11
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相關(guān)代理商/技術(shù)參數(shù) |
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| MIXA20WB1200TML | 功能描述:IGBT 模塊 Converter-Brake Inverter Module RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MIXA225PF1200TSF | 功能描述:IGBT 模塊 XPT IGBT Module RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MIXA225RF1200TSF | 功能描述:IGBT 模塊 XPT IGBT Module RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MIXA300PF1200TSF | 功能描述:IGBT 模塊 XPT IGBT Module RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| MIXA30W1200TED | 功能描述:IGBT 模塊 Six-Pack XPT IGBT RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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