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參數(shù)資料
| 型號： | MIG75J101H |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon N Channel IGBT |
| 中文描述： | IGBT的硅?頻道 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 198K |
| 代理商： | MIG75J101H |
MIG75J101H
2001-05-11
3
b.
Control Stage
(T
j
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
High side
I
D (H)
―
8
―
Control circuit current
Low side
I
D (L)
V
D
= 15 V
―
24
―
mA
Input-on signal voltage
V
IN (on)
V
D
= 15 V, I
C
= 75 mA
1.3
1.5
1.7
V
Input-off signal voltage
V
IN (off)
V
D
= 15 V, I
C
= 75 mA
2.2
2.5
2.8
V
Protection
I
FO (on)
8
10
12
Fault output current
Normal
I
FO (off)
V
D
= 15 V
―
―
1
mA
Over current
protection trip level
Inverter
OC
V
D
= 15 V, T
j
= 125°C
105
150
―
A
Short circuit
protection trip level
Inverter
SC
V
D
= 15 V, T
j
= 125°C
157
225
―
A
Over current cut-off time
t
off (OC)
V
D
= 15 V
―
5
―
μs
Trip level
OT
110
118
125
Over temperature
protection
Reset level
OTr
Case temperature
―
98
―
°C
Trip level
UV
11.0
12.0
12.5
Control supply under
voltage protection
Reset level
UVr
―
―
12.5
―
V
Fault output pulse width
t
FO
V
D
= 15 V
1
2
3
ms
*1:
*2:
Duty = 50%
Duty = 50% (all elements) & fault output current (sink)
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