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參數(shù)資料
| 型號： | MIG75J101H |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon N Channel IGBT |
| 中文描述： | IGBT的硅?頻道 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 198K |
| 代理商： | MIG75J101H |
MIG75J101H
2001-05-11
2
Maximum Ratings
(T
j
= 25°C)
Stage
Characteristic
Condition
Symbol
Ratings
Unit
Supply voltage
P-N power terminal
V
CC
450
V
Collector-emitter voltage
―
V
CES
600
V
Collector current
Tc = 25°C, DC
I
C
75
A
Forward current
Tc = 25°C, DC
I
F
75
A
Collector power dissipation
Tc = 25°C
P
C
235
W
Inverter
Junction temperature
―
T
j
150
°C
Control supply voltage
V
D
-GND terminal
V
D
20
V
Input voltage
IN-GND terminal
V
IN
20
V
Fault output voltage
FO-GND (L) terminal
V
FO
20
V
Control
Fault output current
FO sink current
I
FO
14
mA
Operating temperature
―
TC
20 ~ +100
°C
Storage temperature range
―
T
stg
40 ~ +125
°C
Isolation voltage
AC 1 minute
V
ISO
2500
V
Module
Screw torque
M5
―
3
Nm
Electrical Characteristics
(T
j
= 25°C)
a.
Inverter Stage
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
T
j
= 25°C
―
―
1
Collector cut-off current
I
CEX
V
CEX
= 600V
T
j
= 125°C
―
―
20
mA
T
j
= 25°C
―
2.0
2.5
Collector-emitter saturation voltage
V
CE
(sat)
V
D
= 15 V, I
C
= 75 A
V
IN
= 15 V
→
0 V
T
j
= 125°C
―
2.0
―
V
Forward voltage
V
F
I
F
= 75A
―
2.1
3.0
V
t
on
―
1.0
2.0
t
off
―
1.2
3.0
t
f
―
0.2
0.5
Switching time
t
rr
V
CC
= 300 V, I
C
= 75 A
V
D
= 15 V, V
IN
= 15 V
0 V
Inductive load
(Note 1)
―
0.1
0.3
μs
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