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參數(shù)資料
| 型號： | MIG150J7CSB1W |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
| 中文描述： | 東芝智能功率模塊IGBT的硅?頻道 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大小： | 186K |
| 代理商： | MIG150J7CSB1W |
MIG150J7CSB1W
2001-11-13
9
OC
280
0
0
200
600
240
200
120
40
400
Tj
VD 15 V
125°C
160
80
100
300
700
500
120
0
0
5
15
25
60
80
10
100
40
20
20
VD 15 V
Tj = 25°C
30
0
0
5
15
25
15
20
10
25
10
5
20
VD 15 V
Tj = 25°C
400
0
0
25
75
150
200
300
50
100
125
100
VD 15 V
Inverter stage
Brake stage
T
/
W
C
C
Case temperature TC (°C)
OC – T
C
O
O
Carrier frequency f
c
(kHz)
I
D (H)
– f
c
H
D
Carrier frequency f
c
(kHz)
I
D (L)
– f
c
L
D
Collector-emitter voltage VCE (V)
Reverse bias SOA
Pulse width tw (s)
Pulse width tw (s)
R
th (t)
– tw Brake stage
T
/
W
R
th (t)
– tw Inverter stage
1
0.001
0.001
0.01
1
0.003
0.1
0.01
0.005
0.03
0.1
0.05
0.3
0.5
10
Tc 25°C
Diode stage
Transistor stage
1
0.001
0.001
0.01
1
0.003
0.1
0.01
0.005
0.03
0.1
0.05
0.3
0.5
10
Tc 25°C
Diode stage
Transistor stage
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