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參數(shù)資料
| 型號： | MIG150J7CSB1W |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
| 中文描述： | 東芝智能功率模塊IGBT的硅?頻道 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 186K |
| 代理商： | MIG150J7CSB1W |
MIG150J7CSB1W
2001-11-13
8
100
1
0
50
100
200
3
30
150
Common cathode
:Tj = 25°C
:Tj = 125°C
Irr
10
trr
0
0
1
3
2
4
Common cathode
:Tj = 25°C
:Tj = 125°C
50
100
150
200
300
250
10
0.01
0
50
200
0.1
1
Tj = 125°C
VCC 300 V
VD 15 V
L-Load
ton
toff
tc (on)
tc (off)
0.03
0.05
0.3
0.5
3
5
100
150
10
0.01
0
50
200
0.1
1
Tj = 25°C
VCC 300 V
VD 15 V
L-Load
ton
toff
tc (on)
tc (off)
0.03
0.05
0.3
0.5
3
5
100
150
300
0
0
1
3
4
50
100
200
2
150
VD 17 V
Common emitter
Tj = 125°C
13 V
15 V
250
300
0
0
1
3
4
50
100
200
2
150
VD 17 V
Common emitter
Tj = 25°C
13 V
15 V
250
F
F
S
Collector-emitter voltage VCE (V)
I
C
– V
CE
C
Collector-emitter voltage VCE (V)
I
C
– V
CE
C
Collector current IC (A)
Switching time – I
C
S
Collector current IC (A)
Switching time – I
C
Forward voltage V
F
(V)
I
F
– V
F
Forward current I
F
(A)
t
rr
, I
rr
– I
F
P
P
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|---|---|
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