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參數(shù)資料
| 型號： | MID117 |
| 廠商： | DC Components Co., Ltd. |
| 英文描述： | TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR |
| 中文描述： | 技術參數(shù)的PNP達林頓晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 84K |
| 代理商： | MID117 |
MID117
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR
Pinning
1 = Base
2 = Collector
3 = Emitter
TO-251
Dimensions in inches and (millimeters)
.284(7.20)
.268(6.80)
.217(5.50)
.205(5.20)
.268(6.80)
.252(6.40)
(.256
(.035
(.032
(.181
.095(2.40)
.087(2.20)
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
.022(0.55)
.018(0.45)
.063(1.60)
.055(1.40)
1
2
3
2
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
-100
-100
-5
-2
25
+150
-55 to +150
Unit
V
V
V
A
W
o
C
o
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation(T
C
=25
o
C)
Junction Temperature
Storage Temperature
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
BV
CBO
BV
CEO
I
CBO
I
CEO
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
V
BE(on)
h
FE1
h
FE2
h
FE3
C
ob
Min
-100
-100
-
-
-
-
-
-
-
500
1K
200
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-10
-20
-2
-2
-3
-4
-2.8
-
12K
-
200
Unit
V
V
μ
A
μ
A
mA
V
V
V
V
-
-
-
pF
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
I
C
=-1mA
I
C
=-30mA
V
CB
=-80V
V
CE
=-50V
V
BE
=-5V
I
C
=-2A, I
B
=-8mA
I
C
=-4A, I
B
=-80mA
I
C
=-4A, I
B
=-40mA
I
C
=-2A, V
CE
=-4V
I
C
=-0.5A, V
CE
=-3V
I
C
=-2A, V
CE
=-3V
I
C
=-4A, V
CE
=-3V
V
CB
=-10V, f=0.1MHz
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(
1)
Base-Emitter Saturation Voltage
(
1)
Base-Emitter On Voltage
(
1)
DC Current Gain
(1)
Output Capacitance
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
Description
Designed for general purpose power and switching
such as output or driver stages in applications such
as switching regulators, converters, and amplifiers.
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