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參數(shù)資料
| 型號： | MID31C |
| 廠商： | DC Components Co., Ltd. |
| 英文描述： | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 技術規(guī)格晶體管瑞展 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 84K |
| 代理商： | MID31C |
MID31C
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and
switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation(T
C
=25
o
C)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
100
100
5
3
15
+150
-55 to +150
Unit
V
V
V
A
W
o
C
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
BV
CBO
BV
CEO
I
CES
I
CEO
I
EBO
V
CE(sat)
V
BE(on)
h
FE1
h
FE2
f
T
Min
100
100
-
-
-
-
-
25
10
3
Typ
-
-
-
-
-
-
-
-
-
-
Max
-
-
20
50
1
1.2
1.8
-
50
-
Unit
V
V
μ
A
μ
A
mA
V
V
-
-
MHz
Test Conditions
I
C
=1mA, I
E
=0
I
C
=30mA, I
B
=0
V
CE
=100V, V
EB
=0
V
CE
=60V, I
B
=0
V
EB
=5V, I
C
=0
I
C
=3A, I
B
=375mA
I
C
=3A, V
CE
=4V
I
C
=1A, V
CE
=4V
I
C
=3A, V
CE
=4V
I
C
=0.5A, V
CE
=10V, f=1MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(
1)
Base-Emitter On Voltage
(1)
DC Current Gain
(1)
Transition Frequency
(1)Pulse Test: Pulse Width
380
μ
s, Duty Cycle
2%
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
TO-251
Dimensions in inches and (millimeters)
.284(7.20)
.268(6.80)
.217(5.50)
.205(5.20)
.268(6.80)
.252(6.40)
(.256
(.035
(.032
(.181
.095(2.40)
.087(2.20)
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
.022(0.55)
.018(0.45)
.063(1.60)
.055(1.40)
1
2
3
2
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