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參數(shù)資料
| 型號： | MIC5014 |
| 廠商： | Micrel Semiconductor,Inc. |
| 英文描述： | Low-Cost High- or Low-Side MOSFET Driver(低成本 高/低邊MOS場效應(yīng)管驅(qū)動器) |
| 中文描述： | 低成本，高或低側(cè)MOSFET驅(qū)動器（低成本高/低邊馬鞍山場效應(yīng)管驅(qū)動器） |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MIC5014 |
MIC5014/5015
Applications Information
Functional Description
The MIC5014 is functionally and pin for pin compatible with
the MIC5011, except for the omission of the optional speed-
up capacitor pins, which are available on the MIC5011. The
MIC5015 is an inverting configuration of the MIC5014.
Micrel
1997
5-141
5
L
MIC5014
Control Input
ON
OFF
1
2
3
4
8
7
6
5
+3V to +30V
NC
Gate
Gnd
Source
Input
V+
NC
NC
10μF
Figure 2. Low Side Driver
not use a socket for the MOSFET. If the MOSFET is a TO-220
type package, make high current connections to the drain tab.
Wiring losses have a profound effect on high-current circuits.
A floating milliohmeter can identify connections that are con-
tributing excess drop under load.
Low Voltage Testing
As the MIC5014/MIC5015 have relatively high output imped-
ances, a normal oscilloscope probe will load the device. This
is especially pronounced at low voltage operation. It is recom-
mended that a FET probe or unity gain buffer be used for all
testing.
Circuit Topologies
The MIC5014 and MIC5015 are well suited for use with
standard power MOSFETs in both low and high side driver
configurations. In addition, the lowered supply voltage re-
quirements of these devices make them ideal for use with logic
level FETs in high side applications with a supply voltage of 3
to 4V. (If higher supply voltages [>4V] are used with logic level
FETs, an external zener clamp must be supplied to ensure
that the maximum V
GS
rating of the logic FET [10V] is not
exceeded.) In addition, a standard IGBT can be driven using
these devices.
Choice of one topology over another is usually based on
speed vs. safety. The fastest topology is the low side driver,
however, it is not usually considered as safe as high side
driving as it is easier to accidentally short a load to ground than
to V
CC.
The slowest, but safest topology is the high side
driver; with speed being inversely proportional to supply
voltage. It is the preferred topology for most military and
automotive applications. Speed can be improved consider-
ably by bootstrapping from the supply.
All topologies implemented using these devices are well
suited to driving inductive loads, as either the gate or the
source pin can be pulled 20V below ground with no effect.
External clamp diodes are unnecessary, except for the case
in which a transient may exceed the overvoltage trip point.
High Side Driver
(Figure 1) The high side topology shown
here is an implementation of a “sleep-mode” switch for a
laptop or notebook computer which uses a logic level FET. A
standard power FET can easily be substituted when supply
voltages above 4V are required.
The internal functions of these devices are controlled via a
logic block (refer to block diagram) connected to the control
input (pin 2). When the input is off (low for the MIC5014, and
high for the MIC5015), all functions are turned off, and the
gate of the external power MOSFET is held low via two N-
channel switches. This results in a very low standby current;
15
μ
A typical, which is necessary to power an internal bandgap.
When the input is driven to the “ON” state, the N-channel
switches are turned off, the charge pump is turned on, and the
P-channel switch between the charge pump and the gate
turns on, allowing the gate of the power FET to be charged.
The op amp and internal zener form an active regulator which
shuts off the charge pump when the gate voltage is high
enough. This is a feature not found on the MIC5011.
The charge pump incorporates a 100kHz oscillator and on-
chip pump capacitors capable of charging a 1,000pF load in
90
μ
s typical. In addition to providing active regulation, the
internal 15V zener is included to prevent exceeding the V
GS
rating of the power MOSFET at high supply voltages.
The MIC5014/15 devices have been improved for greater
ruggedness and durability. All pins can withstand being
pulled 20V below ground without sustaining damage, and the
supply pin can withstand an overvoltage transient of 60V for
1s. An overvoltage shutdown has also been included, which
turns off the device when the supply exceeds 35V.
Construction Hints
High current pulse circuits demand equipment and assembly
techniques that are more stringent than normal, low current
lab practices. The following are the sources of pitfalls most
often encountered during prototyping: Supplies Many bench
power supplies have poor transient response. Circuits that
are being pulse tested, or those that operate by pulse-width
modulation will produce strange results when used with a
supply that has poor ripple rejection, or a peaked transient
response. Always monitor the power supply voltage that
appears at the drain of a high side driver (or the supply side
of the load for a low side driver) with an oscilloscope. It is not
uncommon to find bench power supplies in the 1kW class that
overshoot or undershoot by as much as 50% when pulse
loaded. Not only will the load current and voltage measure-
ments be affected, but it is possible to overstress various
components, especially electrolytic capacitors, with possibly
catastrophic results. A 10
μ
F supply bypass capacitor at the
chip is recommended. Residual resistances Resistances
in circuit connections may also cause confusing results. For
example, a circuit may employ a 50m
power MOSFET for
low voltage drop, but unless careful construction techniques
are used, one could easily add 50 to 100m
resistance. Do
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC5014_05 | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Low-Cost High- or Low-Side MOSFET Driver |
| MIC5014-1 | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Low-Cost High- or Low-Side MOSFET Driver Final Information |
| MIC5014BM | 功能描述:IC DRIVER MOSF HI/LO SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5014BM TR | 功能描述:IC DRIVER MOSF HI/LO SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5014BN | 功能描述:IC DRIVER MOSFET HI/LO SIDE 8DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
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