- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384736 > MIC5014 (Micrel Semiconductor,Inc.) Low-Cost High- or Low-Side MOSFET Driver(低成本 高/低邊MOS場效應(yīng)管驅(qū)動器) PDF資料下載
參數(shù)資料
| 型號： | MIC5014 |
| 廠商： | Micrel Semiconductor,Inc. |
| 英文描述： | Low-Cost High- or Low-Side MOSFET Driver(低成本 高/低邊MOS場效應(yīng)管驅(qū)動器) |
| 中文描述： | 低成本，高或低側(cè)MOSFET驅(qū)動器（低成本高/低邊馬鞍山場效應(yīng)管驅(qū)動器） |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MIC5014 |
MIC5014/5015
Typical Characteristics
All data measured using FET probe to minimize resistive loading
Micrel
5-140
1997
0
1
2
3
4
5
6
5
SUPPLY VOLTAGE (V)
10
15
20
25
30
S
Supply Current
(Output Asserted)
0
5
10
15
20
0
5
SUPPLY VOLTAGE (V)
10
15
20
25
30
G
Gate Enhancement
vs. Supply Voltage
Gate Enhancement =
V
GATE
– V
SUPPLY
0
50
100
150
200
250
300
0
2
4
6
8
10
T
μ
s
GATE CAPACITANCE (nF)
High-Side Turn-On Time
vs. Gate Capacitance
Supply = 12V
0.01
0.1
1
10
100
0
4
8
12
16
20
24
28
T
SUPPLY VOLTAGE (V)
High-Side Turn-On Time
Until Gate = Supply + 4V
C
GATE
= 1300pF
0.01
0.1
1
10
100
0
4
8
12
16
20
24
28
T
SUPPLY VOLTAGE (V)
High-Side Turn-On Time
Until Gate = Supply + 4V
C
GATE
= 3000pF
0
-60 -30
AMBIENT TEMPERATURE (
°
C)
20
40
60
80
100
120
140
160
180
0
30
60
90 120 150
H
μ
s
High-Side Turn-On Time
vs. Temperature
Supply = 12V
C
GATE
= 1000pF
0.01
0.1
1
10
100
0
5
SUPPLY VOLTAGE (V)
10
15
20
25
30
T
High-Side Turn-On Time
Until Gate = Supply + 10V
C
GATE
= 1300pF
0.01
0.1
1
10
100
0
5
SUPPLY VOLTAGE (V)
10
15
20
25
30
T
High-Side Turn-On Time
Until Gate = Supply + 10V
C
GATE
= 3000pF
0
2
4
6
8
10
0
5
SUPPLY VOLTAGE (V)
10
15
20
25
30
T
μ
s
High-Side Turn-Off Time
Until Gate = 1V
C
GATE
= 3000pF
C
=
1300pF
1
10
100
1000
0
GATE-TO-SOURCE VOLTAGE (V)
5
10
15
O
μ
A
Charge-Pump
Output Current
Source connected
to supply: supply
voltage as noted
3V
5V
12V
28V
1
10
100
1000
10000
0
GATE-TO-SOURCE VOLTAGE (V)
5
10
15
O
μ
A
Charge-Pump
Output Current
Source connected
to ground: supply
voltage as noted
3V
5V
12V
28V
1
10
100
1000
10000
0
5
SUPPLY VOLTAGE (V)
10
15
20
25
30
T
μ
s
Low-Side Turn-On Time
Until Gate = 4V
C
GATE
= 3000pF
C
GATE
= 1300pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MIC5015 | Low-Cost High- or Low-Side MOSFET Driver(低成本 高/低邊MOS場效應(yīng)管驅(qū)動器) |
| MIC502 | FPGA - 100000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN |
| MIC502BM | Replaced by PTN78060W,PTN78060H : |
| MIC502BN | Replaced by PTN78060W,PTN78060H : |
| mic5205 | 150mA Low-Noise LDO Regulator(輸出電流150mA低噪聲低壓差穩(wěn)壓器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIC5014_05 | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Low-Cost High- or Low-Side MOSFET Driver |
| MIC5014-1 | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:Low-Cost High- or Low-Side MOSFET Driver Final Information |
| MIC5014BM | 功能描述:IC DRIVER MOSF HI/LO SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5014BM TR | 功能描述:IC DRIVER MOSF HI/LO SIDE 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| MIC5014BN | 功能描述:IC DRIVER MOSFET HI/LO SIDE 8DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。