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參數(shù)資料
| 型號(hào)： | MI5004-18 |
| 廠商： | MICROSEMI CORP-LOWELL |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 9.1 GHz - 9.5 GHz, GALLIUM ARSENIDE, PULSED IMPATT DIODE |
| 封裝： | CERAMIC, ROHS COMPLIANT, M18 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 160K |
| 代理商： | MI5004-18 |
MI5001 – MI5022
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GaAs IMPATT DIODES
TM
Copyright
2008
Rev: 2009-01-19
Features
●
Specified High Output Power
●
High DC to Microwave Efficiency
●
For Pulsed and CW Applications
Applications
●
Oscillators
●
Avionic Systems
●
Electronic Warfare Systems
●
Smart Antennas
Description
Microsemi’s GaAs IMPATT diodes are fabricated utilizing
low- dislocation epitaxial grown doping structures and
with high-temperature metallization processes. The
diodes have been designed to have high output power
when measured in a critically coupled cavity at the
frequency of operation. The M18 is the recommended
package for MSC’s IMPATT diodes due to its low
thermal resistance and threaded stud at the cathode. The
stud should be mounted in a substantial heatsink.
Other ceramic packages are also available.
CW IMPATT Diodes (Specifications @ 25°C)
Part
Number
Operating
Frequency
(GHz)
Min.
PO
(Watts)
Min.
VBR @ 1 mA
(V)
Typ.
CT (0 V)
(pF)
Typ.
VOP
(V)
Typ.
IOP
(A)
Typ.
Eff.
(%)
Max.
°C/W
Pkg.
Style
MI5022-18
9.5–10.2
3.5
30
20
45
0.40
20
12.0
M18
Pulsed IMPATT Diodes (Specifications @ 25°C)
Part
Number
Operating
Frequency
(GHz)
Min.
PO
(Watts)
Min.
VBR @ 1 mA
(V)
Typ.
CT (0 V)
(pF)
Typ.
VOP
(V)
Typ.
IOP
(A)
Typ.
Eff.
(%)
Max.
°C/W
Pkg.
Style
MI5001-18
5.1–5.4
101
70
80
85
1.0
12
8.0
M15
MI5003-18
9.1–9.6
151
45
75
60
1.7
15
9.5
M18
MI5004-18
9.1–9.5
122
35
42
55
1.2
18
9.5
M18
1
Pulse width 0.5–10
S; duty cycle: 0.5–5%.
2
Pulse width 1–2
S; duty cycle: 20–30%.
Notes:
IMPATT diodes are specified to operate at a customer designated fixed frequency within the operating frequency band as measured in a critically coupled cavity.
Total capacitance is specified at 1 MHz.
Test procedure for measuring thermal resistance is available on request.
Breakdown voltage is specified at 1 mA.
IMPORTANT:
For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
These products are supplied with a RoHS
complaint Gold finish
.
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