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參數(shù)資料
| 型號： | MIV41001-21 |
| 廠商： | MICROSEMI CORP-LOWELL |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | mm WAVE BAND, 0.2 pF, 55 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 142K |
| 代理商： | MIV41001-21 |
MIV41001 – MIV41013
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GaAs MULTIPLIER DIODES
ISIS Frequency Multiplier
TM
Copyright
2008
Rev: 2009-01-19
Features
●
High Output Powers — Over 5 W at 35 GHz
●
High Efficiency
●
2 and 3 Stack Options
●
High Cut-Off Frequency
●
Low Thermal Resistance
Applications
●
Frequency Multipliers to Beyond 110 GHz
●
High-Power mmW Transceivers
●
mmW Phase Arrays
●
Drivers for mm Power Amplifiers
ohmic metal
P+ Layer
N Layer
N+ Layer
P+ Layer
N Layer
N+ Layer
Substrate
ohmic metal
ISIS Diode Schematic (2 Stack)
Description
Microsemi’s ISIS frequency multiplier varactors are
fabricated by epitaxially stacking the P-N junctions in
GaAs to obtain high power at millimeter wave
frequencies. The MIV series of ISIS multiplier diodes
has been designed to have the high cut-off frequency to
produce very low conversion loss when used in
appropriately designed circuits. MSC offers 2 and 3
stacked devices to produce high CW power from 40–
110 GHz. CW power up to 3 W at 44 GHz
(conversion loss <3 dB) and 1 W in W band
(conversion loss <9 dB) are realizable with single
devices. ISIS diodes are offered in the low parasitic
(<10 fF), low thermal resistance M29 package and in
other packages.
Specifications @ 25°C
2 Stack ISIS Diodes —
Breakdown Voltage: 55 V Min.
3 Stack ISIS Diodes —
Breakdown Voltage: 75 V Min.
Part
Number
Junction
Capacitance
@ Zero Bias
(pF)
Min.
6 V Cut-Off
Frequency
(GHz)
Typ.
Package
Capacitance
(pF)
MIV41011-21
0.1–0.3
1000
0.15
MIV41012-21
0.3–0.5
700
0.15
MIV41013-21
0.5–1.0
600
0.15
MIV41011-29
0.1–0.3
1000
0.10
MIV41012-29
0.3–0.5
700
0.10
MIV41013-29
0.5–1.0
600
0.10
Part
Number
Junction
Capacitance
@ Zero Bias
(pF)
Min.
6 V Cut-Off
Frequency
(GHz)
Typ.
Package
Capacitance
(pF)
MIV41001-21
0.1–0.3
1000
0.15
MIV41002-21
0.3–0.5
700
0.15
MIV41003-21
0.5–1.0
600
0.15
MIV41001-29
0.1–0.3
1000
0.10
MIV41002-29
0.3–0.5
700
0.10
MIV41003-29
0.5–1.0
600
0.10
IMPORTANT:
For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
These products are supplied with a RoHS
complaint Gold finish
.
Other package styles are available on request.
相關PDF資料 |
PDF描述 |
|---|---|
| MIV41002-21 | mm WAVE BAND, 0.4 pF, 55 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MIV41003-21 | mm WAVE BAND, 0.75 pF, 55 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MIV41011-29 | mm WAVE BAND, 0.2 pF, 75 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MIV41013-21 | mm WAVE BAND, 0.75 pF, 75 V, SILICON, VARIABLE CAPACITANCE DIODE |
| MK1409SLF | 48 MHz, OTHER CLOCK GENERATOR, PDSO8 |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MIV41001-29 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:MIV41001 ISIS Frequency Multiplier |
| MIV41002-21 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:MIV41001 ISIS Frequency Multiplier |
| MIV41002-29 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:MIV41001 ISIS Frequency Multiplier |
| MIV41003-21 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:MIV41001 ISIS Frequency Multiplier |
| MIV41003-29 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:MIV41001 ISIS Frequency Multiplier |
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